Non-exponential photoluminescence decay dynamics of localized carriers in disordered ingan/gan quantum wells: the role of localization length
文献类型：期刊论文
| 作者 | Wang, Y. J.; Xu, S. J.; Zhao, D. G.; Zhu, J. J.; Yang, H.; Shan, X. D.; Yu, D. P. |
| 刊名 | Optics express
 |
| 出版日期 | 2006-12-25 |
| 卷号 | 14期号:26页码:13151-13157 |
| ISSN号 | 1094-4087 |
| 通讯作者 | Wang, y. j.() |
| 英文摘要 | In this article, we report a combined experimental and theoretical study on the luminescence dynamics of localized carriers in disordered ingan/gan quantum wells. the luminescence intensity of localized carriers is found to exhibit an unusual non-exponential decay. adopting a new model taking the radiative recombination and phonon-assisted hopping transition between different localized states into account, which was recently developed by rubel et al., the non-exponential decay behavior of the carriers can be quantitatively interpreted. combining with precise structure characterization, the theoretical simulations show that the localization length of localized carriers is a key parameter governing their luminescence decay dynamics. (c) 2006 optical society of america. |
| WOS关键词 | TIME-RESOLVED PHOTOLUMINESCENCE |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| 出版者 | OPTICAL SOC AMER |
| WOS记录号 | WOS:000243144600067 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426559 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Y. J. |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 4.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China 5.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Y. J.,Xu, S. J.,Zhao, D. G.,et al. Non-exponential photoluminescence decay dynamics of localized carriers in disordered ingan/gan quantum wells: the role of localization length[J]. Optics express,2006,14(26):13151-13157. |
| APA | Wang, Y. J..,Xu, S. J..,Zhao, D. G..,Zhu, J. J..,Yang, H..,...&Yu, D. P..(2006).Non-exponential photoluminescence decay dynamics of localized carriers in disordered ingan/gan quantum wells: the role of localization length.Optics express,14(26),13151-13157. |
| MLA | Wang, Y. J.,et al."Non-exponential photoluminescence decay dynamics of localized carriers in disordered ingan/gan quantum wells: the role of localization length".Optics express 14.26(2006):13151-13157. |
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来源：半导体研究所
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