Photoluminescence from c+ ion-implanted and electrochemical etched si layers
文献类型：期刊论文
| 作者 | Shi, Liwei; Wang, Qiang; Li, Yuguo; Xue, Chengshan; Zhuang, Huizhao |
| 刊名 | Applied surface science
 |
| 出版日期 | 2006-10-15 |
| 卷号 | 252期号:24页码:8424-8427 |
| ISSN号 | 0169-4332 |
| 关键词 | Ion implantation Annealing Chemical etching Photoluminescence |
| DOI | 10.1016/j.apsusc.2005.11.050 |
| 通讯作者 | Shi, liwei(liweishi@semi.ac.en) |
| 英文摘要 | The microstructural and optical analysis of si layers emitting blue luminescence at about 431 nm is reported. these structures have been synthesized by c+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. with the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. c=o compounds are induced during c+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. the possible mechanism of photoluminescence is presented. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | POROUS SILICON ; LUMINESCENCE |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000241888000009 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426560 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, Liwei |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, Liwei,Wang, Qiang,Li, Yuguo,et al. Photoluminescence from c+ ion-implanted and electrochemical etched si layers[J]. Applied surface science,2006,252(24):8424-8427. |
| APA | Shi, Liwei,Wang, Qiang,Li, Yuguo,Xue, Chengshan,&Zhuang, Huizhao.(2006).Photoluminescence from c+ ion-implanted and electrochemical etched si layers.Applied surface science,252(24),8424-8427. |
| MLA | Shi, Liwei,et al."Photoluminescence from c+ ion-implanted and electrochemical etched si layers".Applied surface science 252.24(2006):8424-8427. |
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来源：半导体研究所
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