Measurement of threading dislocation densities in gan by wet chemical etching
文献类型：期刊论文
| 作者 | Chen, J.; Wang, J. F.; Wang, H.; Zhu, J. J.; Zhang, S. M.; Zhao, D. G.; Jiang, D. S.; Yang, H.; Jahn, U.; Ploog, K. H. |
| 刊名 | Semiconductor science and technology
 |
| 出版日期 | 2006-09-01 |
| 卷号 | 21期号:9页码:1229-1235 |
| ISSN号 | 0268-1242 |
| DOI | 10.1088/0268-1242/21/9/004 |
| 通讯作者 | Chen, j.(jchen@red.semi.ac.cn) |
| 英文摘要 | We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (tds) in gan. large and small etch pits are formed by phosphoric acid on the etched surfaces. the large etch pits are attributed to screw/mixed tds and the small ones to edge tds, according to their locations on the surface and burgers vectors of tds. additionally, the origin of small etch pits is confirmed by a transmission electron microscopy. the difference in the size of etch pits is discussed in view of their origin and merging. overetching at elevated temperatures or for a long time may result in merging of individual etch pits and underestimating of the density of tds. wet chemical etching has also been proved efficient in revealing the distribution of tds in epitaxial lateral overgrowth gan. |
| WOS关键词 | X-RAY-DIFFRACTION ; EPITAXIAL LAYERS ; VAPOR-DEPOSITION ; FILMS ; MOCVD ; PITS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000240123200005 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426561 |
| 专题 | 半导体研究所 |
| 通讯作者 | Chen, J. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany |
| 推荐引用方式 GB/T 7714 | Chen, J.,Wang, J. F.,Wang, H.,et al. Measurement of threading dislocation densities in gan by wet chemical etching[J]. Semiconductor science and technology,2006,21(9):1229-1235. |
| APA | Chen, J..,Wang, J. F..,Wang, H..,Zhu, J. J..,Zhang, S. M..,...&Ploog, K. H..(2006).Measurement of threading dislocation densities in gan by wet chemical etching.Semiconductor science and technology,21(9),1229-1235. |
| MLA | Chen, J.,et al."Measurement of threading dislocation densities in gan by wet chemical etching".Semiconductor science and technology 21.9(2006):1229-1235. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。