中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation of gan nanorods through ammoniating ga2o3/bn films deposited by magnetron sputtering

文献类型:期刊论文

作者Wu Yuxin; Xue Chengshan; Zhuang Huizhao; Tian Deheng; Liu Yi'an; Sun Lili; Wang Fuxue; Ai Yujie
刊名Rare metal materials and engineering
出版日期2006-08-01
卷号35页码:129-132
关键词Magnetron sputtering Ammoniating Gan nanorods Photoluminescence
ISSN号1002-185X
通讯作者Xue chengshan(xuechengshan@sdnu.edu.cn)
英文摘要Large-scale gan nanorods were synthesized on si(111) substrate through ammoniating ga2o3/bn films deposited by radio frequency magnetron sputtering technology. the structure, elemental composition, morphology and optical properties of the as-synthesized samples were characterized by x-ray diffraction (xrd), selected-area electron diffraction (saed), fourier transformed infrared spectrum (ftir), scanning electron microscopy (sem), transmission electron microscopy (tem) and photoluminescence spectrum (pl). the results showed that the synthesized nanorods are hexagonal wurtzite gan with diameters ranging from 150 to 400nm and lengths up to several tens of microns. photoluminescence spectra at room temperature showed a strong ultraviolet luminescence peak centered at 372nm and a blue luminescence peak centered at 420nm.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; NANOWIRES ; GROWTH ; PHOTOLUMINESCENCE ; FABRICATION ; SUBSTRATE ; SILICON ; CARBON
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000240623800032
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2426563
专题半导体研究所
通讯作者Xue Chengshan
作者单位Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China
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GB/T 7714
Wu Yuxin,Xue Chengshan,Zhuang Huizhao,et al. Preparation of gan nanorods through ammoniating ga2o3/bn films deposited by magnetron sputtering[J]. Rare metal materials and engineering,2006,35:129-132.
APA Wu Yuxin.,Xue Chengshan.,Zhuang Huizhao.,Tian Deheng.,Liu Yi'an.,...&Ai Yujie.(2006).Preparation of gan nanorods through ammoniating ga2o3/bn films deposited by magnetron sputtering.Rare metal materials and engineering,35,129-132.
MLA Wu Yuxin,et al."Preparation of gan nanorods through ammoniating ga2o3/bn films deposited by magnetron sputtering".Rare metal materials and engineering 35(2006):129-132.

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来源:半导体研究所

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