Mutual passivation of donors and isovalent nitrogen in gaas
文献类型：期刊论文
| 作者 | Li, J; Carrier, P; Wei, SH; Li, SS; Xia, JB |
| 刊名 | Physical review letters
 |
| 出版日期 | 2006-01-27 |
| 卷号 | 96期号:3页码:4 |
| ISSN号 | 0031-9007 |
| DOI | 10.1103/physrevlett.96.035505 |
| 通讯作者 | Li, j() |
| 英文摘要 | We study the mutual passivation of shallow donor and isovalent n in gaas. we find that all the donor impurities, si(ga), ge(ga), s(as), and se(as), bind to n in gaasn, which has a large n-induced band-gap reduction relative to gaas. for a group-iv impurity such as si, the formation of the nearest-neighbor si(ga)-n(as) defect complex creates a deep donor level below the conduction band minimum (cbm). the coupling between this defect level with the cbm pushes the cbm upwards, thus restoring the gaas band gap; the lowering of the defect level relative to the isolated si(ga) shallow donor level is responsible for the increased electrical resistivity. therefore, si and n mutually passivate each other's electrical and optical activities in gaas. for a group-vi shallow donor such as s, the binding between s(as) and n(as) does not form a direct bond; therefore, no mutual passivation exists in the gaas(s+n) system. |
| WOS关键词 | DILUTED GANXAS1-X ALLOYS ; GROUP-IV DONORS ; SEMICONDUCTOR ALLOYS ; OPTICAL-PROPERTIES ; BAND ; GAN(X)AS1-X ; IMPURITIES ; HYDROGEN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000234969300060 |
| 出版者 | AMER PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426569 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, J |
| 作者单位 | 1.Natl Renewable Energy Lab, Golden, CO 80401 USA 2.Chinese Acad Sci, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, J,Carrier, P,Wei, SH,et al. Mutual passivation of donors and isovalent nitrogen in gaas[J]. Physical review letters,2006,96(3):4. |
| APA | Li, J,Carrier, P,Wei, SH,Li, SS,&Xia, JB.(2006).Mutual passivation of donors and isovalent nitrogen in gaas.Physical review letters,96(3),4. |
| MLA | Li, J,et al."Mutual passivation of donors and isovalent nitrogen in gaas".Physical review letters 96.3(2006):4. |
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来源：半导体研究所
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