Optical properties of self-assembled inas/inalas/inp quantum wires with different inas deposited thickness
文献类型：期刊论文
| 作者 | Lei, W; Chen, YH; Wang, YL; Huang, XQ; Zhao, C; Liu, JQ; Xu, B; Jin, P; Zeng, YP; Wang, ZG |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006 |
| 卷号 | 286期号:1页码:23-27 |
| 关键词 | Defects Lateral composition modulation Photoluminescence Molecular beam epitaxy Quantum wires Semiconductor iii-v material |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.09.054 |
| 通讯作者 | Lei, w(ahleiwen@red.semi.ac.cn) |
| 英文摘要 | We report on the photoluminescence (pl) properties of inas/inalas/inp quantum wires (qwrs) with various inas deposited thickness. the pl linewidth of the qwrs decreases with increasing inas deposited thickness due to the different thicknesses of the qwrs and defects in the samples. the defects and lateral composition modulation of the inalas layers play an important role in the temperature-dependent pl properties of the samples. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | DOTS ; HETEROSTRUCTURES ; INALAS/INP(001) ; SPECTROSCOPY ; WAVELENGTH ; INP(001) |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000234135300005 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426582 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lei, W |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lei, W,Chen, YH,Wang, YL,et al. Optical properties of self-assembled inas/inalas/inp quantum wires with different inas deposited thickness[J]. Journal of crystal growth,2006,286(1):23-27. |
| APA | Lei, W.,Chen, YH.,Wang, YL.,Huang, XQ.,Zhao, C.,...&Wang, ZG.(2006).Optical properties of self-assembled inas/inalas/inp quantum wires with different inas deposited thickness.Journal of crystal growth,286(1),23-27. |
| MLA | Lei, W,et al."Optical properties of self-assembled inas/inalas/inp quantum wires with different inas deposited thickness".Journal of crystal growth 286.1(2006):23-27. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。