Pixe analysis of fe content in fe-implanted gan film
文献类型：期刊论文
| 作者 | Zhang, B.; Shi, L. Q.; Chen, C. C.; Zhao, D. G. |
| 刊名 | Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
 |
| 出版日期 | 2006-11-01 |
| 卷号 | 252期号:2页码:225-229 |
| 关键词 | Pixe Fe content Ion implantation Diluted magnetic semiconductor |
| ISSN号 | 0168-583X |
| DOI | 10.1016/j.nimb.2006.09.007 |
| 通讯作者 | Zhang, b.(binzhang@fudan.edu.cn) |
| 英文摘要 | The diluted magnetic semiconductors (dmss) were achieved by the ion implantation. fe+ ions (250 kev) were implanted into n-type gan at room temperature with doses ranging from 8 x 10(15) cm(-2) to 8 x 10(16) cm(-2) and subsequently rapidly annealed at 800 degrees c for 5 m in n-2 ambient. pixe was employed to determine the fe-implanted content. the magnetic property was measured by the quantum design mpms squid magnetometer. no secondary phases or clusters are detected within the sensitivity of xrd. apparent ferromagnetic hysteresis loops measured at 10 k were presented. the relationships between the fe-implanted content and the ferromagnetic property are discussed. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | P-TYPE GAN ; ROOM-TEMPERATURE ; MN ; SEMICONDUCTORS ; FERROMAGNETISM ; CHINA |
| WOS研究方向 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics |
| WOS类目 | Instruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear |
| 语种 | 英语 |
| WOS记录号 | WOS:000242928800010 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426587 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, B. |
| 作者单位 | 1.Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China 2.Nanjing Univ Technol, Coll Mat Sci & Engn, Nanjing 210009, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, B.,Shi, L. Q.,Chen, C. C.,et al. Pixe analysis of fe content in fe-implanted gan film[J]. Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,2006,252(2):225-229. |
| APA | Zhang, B.,Shi, L. Q.,Chen, C. C.,&Zhao, D. G..(2006).Pixe analysis of fe content in fe-implanted gan film.Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,252(2),225-229. |
| MLA | Zhang, B.,et al."Pixe analysis of fe content in fe-implanted gan film".Nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 252.2(2006):225-229. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。