Growth of inas quantum dots on vicinal gaas (100) substrates by metalorganic chemical vapor deposition and their optical properties
文献类型：期刊论文
| 作者 | Liang, S; Zhu, HL; Pan, JQ; Ye, XL; Wang, W |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-04-01 |
| 卷号 | 289期号:2页码:477-484 |
| 关键词 | Bimodal size distribution Metalorganic vapor phase epitaxy Self-assembled quantum dots Indium arsenide |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.12.070 |
| 通讯作者 | Liang, s(liangsong@red.semi.ac.cn) |
| 英文摘要 | The growth of inas quantum dots on vicinal gaas (100) substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (mocvd). the dots showed a clear bimodal size distribution on vicinal substrates. the way of evolution of this bimodal size distribution was studied as a function of growth temperature, inas layer thickness and inas deposition rate. the optical properties of dots grown on vicinal substrates were also studied by photoluminescence (pl). it was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower pl line width, a longer emission wavelength, and a larger pl intensity. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | PHASE-EPITAXY ; ISLANDS ; INGAAS ; SIZE ; LASER |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000236440400012 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426598 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang, S |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang, S,Zhu, HL,Pan, JQ,et al. Growth of inas quantum dots on vicinal gaas (100) substrates by metalorganic chemical vapor deposition and their optical properties[J]. Journal of crystal growth,2006,289(2):477-484. |
| APA | Liang, S,Zhu, HL,Pan, JQ,Ye, XL,&Wang, W.(2006).Growth of inas quantum dots on vicinal gaas (100) substrates by metalorganic chemical vapor deposition and their optical properties.Journal of crystal growth,289(2),477-484. |
| MLA | Liang, S,et al."Growth of inas quantum dots on vicinal gaas (100) substrates by metalorganic chemical vapor deposition and their optical properties".Journal of crystal growth 289.2(2006):477-484. |
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来源：半导体研究所
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