Synthesis of single-crystal gan nanowires on si(111) substrate by ammonification technology
文献类型：期刊论文
| 作者 | Wu, Yuxin; Xue, Chengshan; Zhuang, Huizhao; Tian, Deheng; Liu, Yi'an; He, Jianting; Wang, Fuxue; Sun, Lili; Ai, Yujie |
| 刊名 | Materials letters
 |
| 出版日期 | 2006-11-01 |
| 卷号 | 60期号:25-26页码:3076-3078 |
| 关键词 | Magnetron sputtering Ammoniating Gan Nanowires |
| ISSN号 | 0167-577X |
| DOI | 10.1016/j.matlet.2006.02.046 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Gan nanowires have been synthesized on si(111) substrate through ammoniating ga2o3/bn films under flowing ammonia atmosphere at the temperature of 900 degrees c. the as-synthesized gan nanowires were characterized by x-ray diffraction (xrd), selected-area electron diffraction (saed), fourier transform infrared (ftir) spectroscopy, scanning electron microscope (sem) and transmission electron microscope (tem). the results demonstrated that the nanowires are hexagonal wurtzite gan and possess a smooth surface with diameters ranging from 40 to 100 nm and lengths up to several tens of micrometers. the growth mechanism of crystalline gan nanowires is discussed briefly. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | THIN-FILMS ; INFRARED-ABSORPTION ; GALLIUM NITRIDE ; GROWTH ; SILICON ; CARBON ; NH3 |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000240374200015 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426610 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Coll Phys & Elect, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, Yuxin,Xue, Chengshan,Zhuang, Huizhao,et al. Synthesis of single-crystal gan nanowires on si(111) substrate by ammonification technology[J]. Materials letters,2006,60(25-26):3076-3078. |
| APA | Wu, Yuxin.,Xue, Chengshan.,Zhuang, Huizhao.,Tian, Deheng.,Liu, Yi'an.,...&Ai, Yujie.(2006).Synthesis of single-crystal gan nanowires on si(111) substrate by ammonification technology.Materials letters,60(25-26),3076-3078. |
| MLA | Wu, Yuxin,et al."Synthesis of single-crystal gan nanowires on si(111) substrate by ammonification technology".Materials letters 60.25-26(2006):3076-3078. |
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来源：半导体研究所
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