中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity

文献类型:期刊论文

作者Wang, XF; Zeng, YP; Wang, BQ; Zhu, ZP; Du, XQ; Li, M; Chang, BK
刊名Applied surface science
出版日期2006-04-15
卷号252期号:12页码:4104-4109
关键词Structure Nea Integrated photosensitivity Gaas Cs : o
ISSN号0169-4332
DOI10.1016/j.apsusc.2005.06.017
通讯作者Wang, xf(xiaofw@red.semi.ac.cn)
英文摘要A new structure of gaas photocathode was introduced. the be-doping concentration is variable in the new structure compared with the constant concentration of be in the normal photocathode. negative electron affinity gaas photocathodes were fabricated by alternate input of cs and o. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词SPECTRAL RESPONSE ; NEA PHOTOCATHODES ; LAYER THICKNESS ; CS ; SURFACE ; PHOTOEMISSION ; SYSTEM
WOS研究方向Chemistry ; Materials Science ; Physics
WOS类目Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000237835100011
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426612
专题半导体研究所
通讯作者Wang, XF
作者单位1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
2.Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect Technol, Nanjing 210094, Peoples R China
推荐引用方式
GB/T 7714
Wang, XF,Zeng, YP,Wang, BQ,et al. The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity[J]. Applied surface science,2006,252(12):4104-4109.
APA Wang, XF.,Zeng, YP.,Wang, BQ.,Zhu, ZP.,Du, XQ.,...&Chang, BK.(2006).The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity.Applied surface science,252(12),4104-4109.
MLA Wang, XF,et al."The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity".Applied surface science 252.12(2006):4104-4109.

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来源:半导体研究所

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