The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity
文献类型：期刊论文
| 作者 | Wang, XF; Zeng, YP; Wang, BQ; Zhu, ZP; Du, XQ; Li, M; Chang, BK |
| 刊名 | Applied surface science
 |
| 出版日期 | 2006-04-15 |
| 卷号 | 252期号:12页码:4104-4109 |
| 关键词 | Structure Nea Integrated photosensitivity Gaas Cs : o |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/j.apsusc.2005.06.017 |
| 通讯作者 | Wang, xf(xiaofw@red.semi.ac.cn) |
| 英文摘要 | A new structure of gaas photocathode was introduced. the be-doping concentration is variable in the new structure compared with the constant concentration of be in the normal photocathode. negative electron affinity gaas photocathodes were fabricated by alternate input of cs and o. the spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathodes with the new structure is enhanced by at least 50% as compared to those with the monolayer structure. accordingly, two main factors leading to the enhanced photosensitivity of the photocathodes were discussed. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | SPECTRAL RESPONSE ; NEA PHOTOCATHODES ; LAYER THICKNESS ; CS ; SURFACE ; PHOTOEMISSION ; SYSTEM |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000237835100011 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426612 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, XF |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect Technol, Nanjing 210094, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, XF,Zeng, YP,Wang, BQ,et al. The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity[J]. Applied surface science,2006,252(12):4104-4109. |
| APA | Wang, XF.,Zeng, YP.,Wang, BQ.,Zhu, ZP.,Du, XQ.,...&Chang, BK.(2006).The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity.Applied surface science,252(12),4104-4109. |
| MLA | Wang, XF,et al."The effect of be-doping structure in negative electron affinity gaas photocathodes on integrated photosensitivity".Applied surface science 252.12(2006):4104-4109. |
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来源：半导体研究所
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