Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films
文献类型:期刊论文
作者 | Gao, Haiyong |
刊名 | Physica e-low-dimensional systems & nanostructures
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出版日期 | 2006-08-01 |
卷号 | 35期号:1页码:117-120 |
关键词 | Gan nanorods Ga2o3/zno films Rf magnetron sputtering Nitridation |
ISSN号 | 1386-9477 |
DOI | 10.1016/j.physe.2006.06.020 |
通讯作者 | Gao, haiyong(hygao@semi.ac.cn) |
英文摘要 | Gallium nitride (gan) nanorods were synthesized by nitriding ga2o3/zno films which were deposited in turn on si (111) substrates using radio frequency (rf) magnetron sputtering system. in the nitridation process, zno was reduced to zn and zn sublimated at 950 degrees c. ga2o3 was reduced to ga2o and ga2o reacted with nh3 to synthesize gan nanorods with the assistance of the sublimation of zn. the morphology and structure of the nanorods were studied by scanning electron microscopy (sem), transmission electron microscopy (tem), high-resolution transmission electron microscopy (hrtem) and selected-area electron diffraction (saed). the composition of gan nanorods was studied by fourier-transform infrared spectrophotometer (ftir). the synthesized nanorods is hexagonal wurtzite structured. nitridation time of the samples has an evident influence on the morphology of gan nanorods synthesized by this method. (c) 2006 elsevier b.v. all rights reserved. |
WOS关键词 | OPTICAL-PROPERTIES ; LASER-DIODES ; ZNO ; SUBSTRATE ; NANOWIRES ; LAYER |
WOS研究方向 | Science & Technology - Other Topics ; Physics |
WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000241425700021 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426613 |
专题 | 半导体研究所 |
通讯作者 | Gao, Haiyong |
作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Gao, Haiyong. Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films[J]. Physica e-low-dimensional systems & nanostructures,2006,35(1):117-120. |
APA | Gao, Haiyong.(2006).Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films.Physica e-low-dimensional systems & nanostructures,35(1),117-120. |
MLA | Gao, Haiyong."Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films".Physica e-low-dimensional systems & nanostructures 35.1(2006):117-120. |
入库方式: iSwitch采集
来源:半导体研究所
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