中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films

文献类型:期刊论文

作者Gao, Haiyong
刊名Physica e-low-dimensional systems & nanostructures
出版日期2006-08-01
卷号35期号:1页码:117-120
关键词Gan nanorods Ga2o3/zno films Rf magnetron sputtering Nitridation
ISSN号1386-9477
DOI10.1016/j.physe.2006.06.020
通讯作者Gao, haiyong(hygao@semi.ac.cn)
英文摘要Gallium nitride (gan) nanorods were synthesized by nitriding ga2o3/zno films which were deposited in turn on si (111) substrates using radio frequency (rf) magnetron sputtering system. in the nitridation process, zno was reduced to zn and zn sublimated at 950 degrees c. ga2o3 was reduced to ga2o and ga2o reacted with nh3 to synthesize gan nanorods with the assistance of the sublimation of zn. the morphology and structure of the nanorods were studied by scanning electron microscopy (sem), transmission electron microscopy (tem), high-resolution transmission electron microscopy (hrtem) and selected-area electron diffraction (saed). the composition of gan nanorods was studied by fourier-transform infrared spectrophotometer (ftir). the synthesized nanorods is hexagonal wurtzite structured. nitridation time of the samples has an evident influence on the morphology of gan nanorods synthesized by this method. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词OPTICAL-PROPERTIES ; LASER-DIODES ; ZNO ; SUBSTRATE ; NANOWIRES ; LAYER
WOS研究方向Science & Technology - Other Topics ; Physics
WOS类目Nanoscience & Nanotechnology ; Physics, Condensed Matter
语种英语
WOS记录号WOS:000241425700021
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426613
专题半导体研究所
通讯作者Gao, Haiyong
作者单位Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Gao, Haiyong. Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films[J]. Physica e-low-dimensional systems & nanostructures,2006,35(1):117-120.
APA Gao, Haiyong.(2006).Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films.Physica e-low-dimensional systems & nanostructures,35(1),117-120.
MLA Gao, Haiyong."Influence of nitridation time on the morphology of gan nanorods synthesized by nitriding ga2o3/zno films".Physica e-low-dimensional systems & nanostructures 35.1(2006):117-120.

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来源:半导体研究所

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