High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd
文献类型：期刊论文
| 作者 | Zhao, Q; Pan, JQ; Zhang, J; Zhou, F; Wang, BJ; Wang, LF; Bian, J; An, X; Zhao, LJ; Wang, W |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2006-06-01 |
| 卷号 | 55期号:6页码:2982-2985 |
| 关键词 | Ultra-low-pressure Selective area growth Tapered mask |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zhao, q(qzhao@red.semi.ac.cn) |
| 英文摘要 | High quality ingaasp/ingaasp multiple quantum wells ( mqws) have been selectively grown by ultra-low-pressure (22 mbar) metal-organic chemical vapor deposition. a large bandgap energy shift of 46 nm and photoluminescence with fwhm less than 30 mev were obtained with a rather small mask width variation (15-30 mu m). in order to study the uniformity of the mqws grown in the selective area, novel tapered masks were employed, and the transition effect w the tapered region was also studied. the energy detuning of the tapered region was observed to be saturated at larger ratios of the mask width to the tapered region length. |
| WOS关键词 | BANDGAP ENERGY CONTROL ; INTEGRATED DFB LASER ; EPITAXY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000238168500055 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426623 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Q |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Pan, JQ,Zhang, J,et al. High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd[J]. Acta physica sinica,2006,55(6):2982-2985. |
| APA | Zhao, Q.,Pan, JQ.,Zhang, J.,Zhou, F.,Wang, BJ.,...&Wang, W.(2006).High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd.Acta physica sinica,55(6),2982-2985. |
| MLA | Zhao, Q,et al."High-quality multiple quantum wells selectively grown on taper-patterned substrates by ultra-low-pressure mocvd".Acta physica sinica 55.6(2006):2982-2985. |
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来源：半导体研究所
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