Theoretical analysis about the influence of channel layer thickness on the 2d electron gas and its distribution in inp-based high-electron-mobility transistors
文献类型：期刊论文
| 作者 | Li Dong-Lin; Zeng Yi-Ping |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 55期号:7页码:3677-3682 |
| 关键词 | Hemt Heterojunction Two dimentional electron gas Self-consistent calculation |
| ISSN号 | 1000-3290 |
| 通讯作者 | Li dong-lin() |
| 英文摘要 | The principle of high-electron-mobility transistor (hemt) and the property of two-dimensional electron gas (2deg) have been analyzed theoretically. the concentration and distribution of 2deg in various channel layers are calculated by numerical method. variation of 2deg concentration in different subband of the quantum well is discussed in detail. calculated results show that sheet electron concentration of 2deg in the channel is affected slightly by the thickness of the channel. but the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. when the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. this result can be used in parameter design of materials and devices. |
| WOS关键词 | FIELD-EFFECT TRANSISTOR ; TRANSPORT-PROPERTIES ; QUANTUM-WELLS ; HEMTS ; FREQUENCY ; DENSITY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000239068500079 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426624 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li Dong-Lin |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li Dong-Lin,Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2d electron gas and its distribution in inp-based high-electron-mobility transistors[J]. Acta physica sinica,2006,55(7):3677-3682. |
| APA | Li Dong-Lin,&Zeng Yi-Ping.(2006).Theoretical analysis about the influence of channel layer thickness on the 2d electron gas and its distribution in inp-based high-electron-mobility transistors.Acta physica sinica,55(7),3677-3682. |
| MLA | Li Dong-Lin,et al."Theoretical analysis about the influence of channel layer thickness on the 2d electron gas and its distribution in inp-based high-electron-mobility transistors".Acta physica sinica 55.7(2006):3677-3682. |
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来源：半导体研究所
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