Comparison between double crystals x-ray diffraction micro-raman measurement on composition determination of high ge content si1_xgex layer epitaxied on si substrate
文献类型:期刊论文
作者 | Zhao, Lei; Zuo, Yuhua; Cheng, Buwen; Yu, Jinzhong; Wang, Qiming |
刊名 | Journal of materials science & technology
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出版日期 | 2006-09-01 |
卷号 | 22期号:5页码:651-654 |
关键词 | Si1_xgex Ge content Composition determination Double crystals x-ray diffraction (dcxrd) Micro-raman measurement |
ISSN号 | 1005-0302 |
通讯作者 | Zhao, lei(leizhao@semi.ac.cn) |
英文摘要 | It is important to acquire the composition of si1-xgex layer, especially that with high ge content, epitaxied on si substrate. two nondestructive examination methods, double crystals x-ray diffraction (dcxrd) and micro-raman measurement, were introduced comparatively to determine x value in si1-xgex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals x-ray diffraction are not credible due to the large strain relaxation occurring in si1-xgex layers when ge content is higher than about 20%. micro-raman measurement is more appropriate for determining high ge content than dcxrd. |
WOS关键词 | BAND-GAP ; HETEROSTRUCTURES ; SUPERLATTICES ; ALLOYS ; RELAXATION ; SCATTERING ; THICKNESS ; STRAIN |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000241099400017 |
出版者 | JOURNAL MATER SCI TECHNOL |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426626 |
专题 | 半导体研究所 |
通讯作者 | Zhao, Lei |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zhao, Lei,Zuo, Yuhua,Cheng, Buwen,et al. Comparison between double crystals x-ray diffraction micro-raman measurement on composition determination of high ge content si1_xgex layer epitaxied on si substrate[J]. Journal of materials science & technology,2006,22(5):651-654. |
APA | Zhao, Lei,Zuo, Yuhua,Cheng, Buwen,Yu, Jinzhong,&Wang, Qiming.(2006).Comparison between double crystals x-ray diffraction micro-raman measurement on composition determination of high ge content si1_xgex layer epitaxied on si substrate.Journal of materials science & technology,22(5),651-654. |
MLA | Zhao, Lei,et al."Comparison between double crystals x-ray diffraction micro-raman measurement on composition determination of high ge content si1_xgex layer epitaxied on si substrate".Journal of materials science & technology 22.5(2006):651-654. |
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来源:半导体研究所
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