Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao, DG; Zhu, JJ; Jiang, DS; Yang, H; Liang, JW; Li, XY; Gong, HM |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-03-15 |
| 卷号 | 289期号:1页码:72-75 |
| 关键词 | Growth rate Parasitic reaction Mocvd Aln |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.11.083 |
| 通讯作者 | Zhao, dg(dgzhao@red.semi.ac.cn) |
| 英文摘要 | The al composition of metalorganic chemical vapor deposition (mocvd)-grown algan alloy layers is found to be greatly influenced by the parasitic reaction between ammonia (nh3) and trimethylaluminum (tmai). the growth process of aln is carefully investigated by monitoring the in situ optical reflection. the abnormal dependencies of growth rate on growth temperature, reactor pressure, and flux of nh3 are observed and can be well explained by the effect of parasitic reaction. the increase of growth rate with increasing flux of tmai is found to depend on the growth temperature and reactor pressure due to the presence of parasitic effect. a relatively low growth temperature and a reduced reactor pressure are suggested for the effective decrease of parasitic reaction during the mocvd growth of aln and probably lead to a more effective incorporation of al into the algan layers. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | GAS-PHASE REACTIONS ; MOVPE GROWTH ; ALGAN MOVPE ; ALXGA1-XN |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000236163000014 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426634 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, DG |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, DG,Zhu, JJ,Jiang, DS,et al. Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition[J]. Journal of crystal growth,2006,289(1):72-75. |
| APA | Zhao, DG.,Zhu, JJ.,Jiang, DS.,Yang, H.,Liang, JW.,...&Gong, HM.(2006).Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition.Journal of crystal growth,289(1),72-75. |
| MLA | Zhao, DG,et al."Parasitic reaction and its effect on the growth rate of aln by metalorganic chemical vapor deposition".Journal of crystal growth 289.1(2006):72-75. |
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来源：半导体研究所
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