Fabrication of ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m
文献类型：期刊论文
| 作者 | Shi, WH; Mao, RW; Zhao, L; Luo, LP; Wang, QM |
| 刊名 | Chinese physics letters
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 23期号:3页码:735-737 |
| ISSN号 | 0256-307X |
| 通讯作者 | Shi, wh(whshi@red.semi.ac.cn) |
| 英文摘要 | Heterojunction phototransistors (hpts) with several ge/si nano-dot layers as the absorption region are fabricated to obtain improved light detectivity at 1.55 mu m. the hpt detectors are of n-p-n type with ten layers of ge(8ml)/si(45nm) incorporated in the base-collector junction and are grown by an ultrahigh-vacuum chemical-vapor deposition system. the detectors are operated with normal incidence. because of the good quality of the grown material and fabrication process, the dark current is only 0.71pa/mu m(2) under 5 v bias and the break-down voltage is over 20 v. compared to the positive-intrinsic-negative (pin) reference detector with the same absorption layer, the responsivity is improved over 17 times for normal incidence at 1.55 mu m. |
| WOS关键词 | SILICON ; HETEROSTRUCTURES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000235928800058 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426635 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shi, WH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shi, WH,Mao, RW,Zhao, L,et al. Fabrication of ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m[J]. Chinese physics letters,2006,23(3):735-737. |
| APA | Shi, WH,Mao, RW,Zhao, L,Luo, LP,&Wang, QM.(2006).Fabrication of ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m.Chinese physics letters,23(3),735-737. |
| MLA | Shi, WH,et al."Fabrication of ge nano-dot heterojunction phototransistors for improved light detection at 1.55 mu m".Chinese physics letters 23.3(2006):735-737. |
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来源：半导体研究所
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