Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress
文献类型：期刊论文
| 作者 | Tian, Deheng; Xue, Chengshan; Zhuang, Huizhao; Zhang, Xiaokai; Wu, Yuxin; He, Jianting; Liu, Yi'an; Wang, Fuxue |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-07-01 |
| 卷号 | 292期号:2页码:298-301 |
| 关键词 | Actinomorphic nanowires Magnetic sputtering Gallium nitride |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2006.04.013 |
| 通讯作者 | Xue, chengshan(xuechengshan@sdnu.edu.cn) |
| 英文摘要 | Actinomorphic gan nanowires clusters have been achieved by ammoniating ga2o3 thin films deposited on the mg layer on the si (111) substrate. the resulting materials were characterized by x-ray diffraction (xrd), scanning electron microscopy (sem), high resolution transmission electron microscopy (hrtem) and selected-area electron diffraction (saed). sem images show that the resulting materials are actinomorphic nanowires clusters with the glazed surface. xrd, hrtem and saed indicate that the nanowires are single-crystal hexagonal gan with a wurtzite structure. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | BUILDING-BLOCKS ; SILICON ; GROWTH ; FILMS ; DEVICES ; CARBON ; DIODES |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000239481000027 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426640 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, Chengshan |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tian, Deheng,Xue, Chengshan,Zhuang, Huizhao,et al. Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress[J]. Journal of crystal growth,2006,292(2):298-301. |
| APA | Tian, Deheng.,Xue, Chengshan.,Zhuang, Huizhao.,Zhang, Xiaokai.,Wu, Yuxin.,...&Wang, Fuxue.(2006).Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress.Journal of crystal growth,292(2),298-301. |
| MLA | Tian, Deheng,et al."Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress".Journal of crystal growth 292.2(2006):298-301. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。