P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering
文献类型：期刊论文
| 作者 | Wang, Peng; Chen, Nuofu; Yin, Zhigang; Dai, Ruixuan; Bai, Yiming |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-11-13 |
| 卷号 | 89期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2388254 |
| 通讯作者 | Wang, peng(pwang@semi.ac.cn) |
| 英文摘要 | Sb-doped zn1-xmgxo films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. the p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/v s. a p-n homojunction comprising an undoped zno layer and an sb-doped zn0.95mg0.05o layer shows a typical rectifying characteristic. sb-doped p-type zn1-xmgxo films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of zno-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 american institute of physics. |
| WOS关键词 | ZNO THIN-FILMS ; MGXZN1-XO ; DEVICES ; ALLOY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000242100200036 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426641 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, Peng |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Lab Micrograv, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Peng,Chen, Nuofu,Yin, Zhigang,et al. P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering[J]. Applied physics letters,2006,89(20):3. |
| APA | Wang, Peng,Chen, Nuofu,Yin, Zhigang,Dai, Ruixuan,&Bai, Yiming.(2006).P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering.Applied physics letters,89(20),3. |
| MLA | Wang, Peng,et al."P-type zn1-xmgxo films with sb doping by radio-frequency magnetron sputtering".Applied physics letters 89.20(2006):3. |
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来源：半导体研究所
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