Lifetime study of n impurity states in gaas1-xnx (x=0.1%) under hydrostatic pressure
文献类型：期刊论文
| 作者 | Wang, WJ; Yang, XD; Ma, BS; Sun, Z; Su, FH; Ding, K; Xu, ZY; Li, GH; Zhang, Y; Mascarenhas, A |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-05-15 |
| 卷号 | 88期号:20页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2205729 |
| 通讯作者 | Wang, wj(wwjgr@mail.semi.ac.cn) |
| 英文摘要 | The lifetimes of a series of n-related photoluminescence lines (a(2)-a(6)) in gaas1-xnx (x=0.1%) were studied under hydrostatic pressures at similar to 30 k. the lifetimes of a(5) and a(6) were found to increase rapidly with increasing pressure: from 2.1 ns at 0 gpa to more than 20 ns at 0.92 gpa for a(5) and from 3.2 ns at 0.63 gpa to 10.8 ns at 0.92 gpa for a(6). the lifetime is found to be closely correlated with the binding energy of the n impurity states, which is shown either in the pressure dependence for a given emission line or in the lifetime variation from a(2) to a(6). (c) 2006 american institute of physics. |
| WOS关键词 | PAIR LUMINESCENCE ; GAP-N ; GAAS ; EXCITONS ; ALLOY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000237682100036 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426642 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, WJ |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Natl Renewable Energy Lab, Golden, CO 80401 USA 3.Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA |
| 推荐引用方式 GB/T 7714 | Wang, WJ,Yang, XD,Ma, BS,et al. Lifetime study of n impurity states in gaas1-xnx (x=0.1%) under hydrostatic pressure[J]. Applied physics letters,2006,88(20):3. |
| APA | Wang, WJ.,Yang, XD.,Ma, BS.,Sun, Z.,Su, FH.,...&Tu, CW.(2006).Lifetime study of n impurity states in gaas1-xnx (x=0.1%) under hydrostatic pressure.Applied physics letters,88(20),3. |
| MLA | Wang, WJ,et al."Lifetime study of n impurity states in gaas1-xnx (x=0.1%) under hydrostatic pressure".Applied physics letters 88.20(2006):3. |
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来源：半导体研究所
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