Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts
文献类型：期刊论文
| 作者 | Wang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, X. M. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-10-02 |
| 卷号 | 89期号:14页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2358207 |
| 通讯作者 | Wang, r. x.() |
| 英文摘要 | Under identical preparation conditions, au/gan schottky contacts were prepared on two kinds of gan epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. current-voltage (i-v) and variable-frequency capacitance-voltage (c-v) characteristics show that the schottky contacts on the gan epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias i-v and c-v characteristics. this is attributed to the presence of deep level centers. theoretical simulation of the low-frequency c-v curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 american institute of physics. |
| WOS关键词 | DISLOCATIONS ; DEGRADATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000241056900117 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426651 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, R. X. |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, R. X.,Xu, S. J.,Shi, S. L.,et al. Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts[J]. Applied physics letters,2006,89(14):3. |
| APA | Wang, R. X..,Xu, S. J..,Shi, S. L..,Beling, C. D..,Fung, S..,...&Tao, X. M..(2006).Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts.Applied physics letters,89(14),3. |
| MLA | Wang, R. X.,et al."Probing deep level centers in gan epilayers with variable-frequency capacitance-voltage characteristics of au/gan schottky contacts".Applied physics letters 89.14(2006):3. |
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来源：半导体研究所
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