High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd
文献类型：期刊论文
| 作者 | Zhao, Q; Pan, JQ; Zhang, J; Zhu, HL; Wang, W |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2006-02-02 |
| 卷号 | 288期号:1页码:27-31 |
| 关键词 | Selective area growth Ultra-low pressure Ingaasp Tapered mask Integrated device |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2005.12.027 |
| 通讯作者 | Zhao, q(qzhao@red.semi.ac.cn) |
| 英文摘要 | A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (sag) has been developed. to our knowledge, this is the lowest pressure condition during sag process ever reported. in this work, high crystalline quality ingaasp-inp mqws with a photoluminescence (pl) full-width at half-maximum (fwhm) of less than 35mev are selectively grown on mask-patterned planar inp substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (mocvd). in order to study the uniformity of the mqws grown in the selective area, novel tapered masks are designed and used. through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. the mechanism of ultra-low pressure sag is detailed by analyzing the effect of various mask designs and quantum well widths. this powerful technique is then applied to fabricate an electroabsorption-modulated laser (eml). superior device characteristics are achieved, such as a low threshold current of 19ma and an output power of 7mw. (c) 2005 elsevier b.v. all rights reserved. |
| WOS关键词 | BURIED-HETEROSTRUCTURE ; MONOLITHIC INTEGRATION ; SELECTIVE MOVPE ; LASER ; MODULATOR |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000235581800007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426669 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, Q |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, Q,Pan, JQ,Zhang, J,et al. High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd[J]. Journal of crystal growth,2006,288(1):27-31. |
| APA | Zhao, Q,Pan, JQ,Zhang, J,Zhu, HL,&Wang, W.(2006).High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd.Journal of crystal growth,288(1),27-31. |
| MLA | Zhao, Q,et al."High-performance eml grown on taper-masked pattern substrates by ultra-low-pressure mocvd".Journal of crystal growth 288.1(2006):27-31. |
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来源：半导体研究所
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