Monte carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth
文献类型：期刊论文
| 作者 | Zhao, C.; Chen, Y. H.; Zhao, Man; Zhang, C. L.; Xu, B.; Yu, L. K.; Sun, J.; Lei, W.; Wang, Z. G. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:31-35 |
| 关键词 | Monte carlo simulation Molecular beam epitaxy Kinetic effects Quantum dot |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2006.01.003 |
| 通讯作者 | Zhao, c.(czhao@semi.ac.cn) |
| 英文摘要 | Performing an event-based continuous kinetic monte carlo simulation, we investigate the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots (qds). the relative positions between the qds and the dislocations are studied. the stress effects to the growth of the qds are considered in simulation. the simulation results are compared with the experiment and the agreement between them indicates that this simulation is useful to study the growth mode and the atomic kinetics during the growth of the semiconductor qds. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | LAYER |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000238805900007 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426670 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, C. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Beijing Inst Petrochem & Technol, Dept Math & Phys, Beijing 102617, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, C.,Chen, Y. H.,Zhao, Man,et al. Monte carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth[J]. Materials science in semiconductor processing,2006,9(1-3):31-35. |
| APA | Zhao, C..,Chen, Y. H..,Zhao, Man.,Zhang, C. L..,Xu, B..,...&Wang, Z. G..(2006).Monte carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth.Materials science in semiconductor processing,9(1-3),31-35. |
| MLA | Zhao, C.,et al."Monte carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth".Materials science in semiconductor processing 9.1-3(2006):31-35. |
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来源：半导体研究所
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