Resonant raman scattering with the e+ band in a dilute gaas1-xnx alloy (x=0.1%)
文献类型：期刊论文
| 作者 | Tan, P. H.; Xu, Z. Y.; Luo, X. D.; Ge, W. K.; Zhang, Y.; Mascarenhas, A.; Xin, H. P.; Tu, C. W. |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-09-04 |
| 卷号 | 89期号:10页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2345605 |
| 通讯作者 | Tan, p. h.(pinghengtan@hotmail.com) |
| 英文摘要 | Resonant raman scattering has been applied to a dilute gaas1-xnx alloy with 0.1% n. the raman lines of gaas and gan related modes, their combinations, and multiple order replicas of gaas-like longitudinal-optical modes have been observed with a lower n composition than those studied previously. all these raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called e+ transition. this study provides additional insights into how the gaas host conduction band states are perturbed and thus the electron-phonon interaction is affected by the n doping. (c) 2006 american institute of physics. |
| WOS关键词 | TRANSITIONS ; STATES |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000240384000043 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426678 |
| 专题 | 半导体研究所 |
| 通讯作者 | Tan, P. H. |
| 作者单位 | 1.State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China 3.Natl Renewable Energy Lab, Golden, CO 80401 USA 4.Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA |
| 推荐引用方式 GB/T 7714 | Tan, P. H.,Xu, Z. Y.,Luo, X. D.,et al. Resonant raman scattering with the e+ band in a dilute gaas1-xnx alloy (x=0.1%)[J]. Applied physics letters,2006,89(10):3. |
| APA | Tan, P. H..,Xu, Z. Y..,Luo, X. D..,Ge, W. K..,Zhang, Y..,...&Tu, C. W..(2006).Resonant raman scattering with the e+ band in a dilute gaas1-xnx alloy (x=0.1%).Applied physics letters,89(10),3. |
| MLA | Tan, P. H.,et al."Resonant raman scattering with the e+ band in a dilute gaas1-xnx alloy (x=0.1%)".Applied physics letters 89.10(2006):3. |
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来源：半导体研究所
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