Growth of thicker zinc-blende crsb layers by using (in,ga)as buffer layers
文献类型：期刊论文
| 作者 | Deng, JJ; Zhao, JH; Bi, JF; Niu, ZC; Yang, FH; Wu, XG; Zheng, HZ |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2006-05-01 |
| 卷号 | 99期号:9页码:3 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2192247 |
| 通讯作者 | Zhao, jh() |
| 英文摘要 | Zinc-blende crsb (zb-crsb) layers with room-temperature ferromagnetism have been grown on (in,ga)as buffer layers epitaxially prepared on (001) gaas substrates by molecular-beam epitaxy. compared with the typical thickness [2-3 ml (ml denotes monolayers)] of zb-crsb grown directly on gaas, the thickness of zb-crsb grown on (in,ga)as has been increased largely; the maximum can be up to similar to 9 ml. high-resolution cross sectional transmission electron microscopy images show that the zb-crsb layer is combined with (in,ga)as buffer layer without any dislocations at the interface. (c) 2006 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM-EPITAXY ; ROOM-TEMPERATURE FERROMAGNETISM ; SPINTRONICS ; MULTILAYER ; FILMS ; CRAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000237682900053 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426680 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, JH |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng, JJ,Zhao, JH,Bi, JF,et al. Growth of thicker zinc-blende crsb layers by using (in,ga)as buffer layers[J]. Journal of applied physics,2006,99(9):3. |
| APA | Deng, JJ.,Zhao, JH.,Bi, JF.,Niu, ZC.,Yang, FH.,...&Zheng, HZ.(2006).Growth of thicker zinc-blende crsb layers by using (in,ga)as buffer layers.Journal of applied physics,99(9),3. |
| MLA | Deng, JJ,et al."Growth of thicker zinc-blende crsb layers by using (in,ga)as buffer layers".Journal of applied physics 99.9(2006):3. |
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来源：半导体研究所
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