Raman scattering study on vibrational modes in ga1-xmnxn prepared by mn-ion implantation
文献类型：期刊论文
| 作者 | Islam, M. R.; Chen, N. F.; Yamada, M. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:184-187 |
| 关键词 | Raman scattering Ferromagnetic semiconductor gamnn Ion implantation |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2006.01.059 |
| 通讯作者 | Islam, m. r.(islambit@yahoo.com) |
| 英文摘要 | Raman scattering measurements have been carried out on ferromagnetic semiconductor ga1-xmnxn prepared by mn-ion implantation and post annealing. the raman results obtained from the annealed and un-annealed ga1-xmnxn demonstrate that crystalline quality has been improved in ga1-xmnxn after annealing. some new vibrational modes in addition to gan-like modes are found in the raman spectra measured from the ga1-xmnxn where the gan-like modes are found to be shifted in the higher frequency side than those measured from the bulk gan. a new vibrational mode observed is assigned to mnn-like mode. other new phonon modes observed are assigned to disorder-activated modes and mn-related vibrational modes caused by mn-ion implantation and post-annealing. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | GROWTH ; GAN |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000238805900040 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426687 |
| 专题 | 半导体研究所 |
| 通讯作者 | Islam, M. R. |
| 作者单位 | 1.Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan |
| 推荐引用方式 GB/T 7714 | Islam, M. R.,Chen, N. F.,Yamada, M.. Raman scattering study on vibrational modes in ga1-xmnxn prepared by mn-ion implantation[J]. Materials science in semiconductor processing,2006,9(1-3):184-187. |
| APA | Islam, M. R.,Chen, N. F.,&Yamada, M..(2006).Raman scattering study on vibrational modes in ga1-xmnxn prepared by mn-ion implantation.Materials science in semiconductor processing,9(1-3),184-187. |
| MLA | Islam, M. R.,et al."Raman scattering study on vibrational modes in ga1-xmnxn prepared by mn-ion implantation".Materials science in semiconductor processing 9.1-3(2006):184-187. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。