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Tunable spin transport in magnetic-electric superlattice

文献类型:期刊论文

作者Wei, J. S.; Wang, R. Z.; Yuan, R. Y.; Song, X. M.; Wang, B.; Yan, H.
刊名Physics letters a
出版日期2006-10-30
卷号358期号:5-6页码:470-473
关键词Spin transport Superlattice Tunable magnetic-electric
ISSN号0375-9601
DOI10.1016/j.physleta.2006.05.062
通讯作者Wang, r. z.(wrz@bjut.edu.cn)
英文摘要We study the spin-dependent electron transport in a special magnetic-electric superlattice periodically modulated by parallel ferromagnetic metal stripes and schottky normal-metal stripes. the results show that, the spin-polarized current can be well controllable by modulating the magnetic strength of the ferromagnetic stripes or the voltage applied to the schottky normal-metal stripes. it is obvious that, to the system of the magnetic superlattice, the polarized current can be enhanced by the magnetic strength of ferromagnetic stripes. nevertheless, it is found that, for the magnetic-electric superlattice, the polarized current can also be remarkably advanced by the voltage applied to the schottky normal-metal stripes. these results may indicate a useable approach for tunable spintronic devices. (c) 2006 elsevier b.v. all rights reserved.
WOS关键词ROOM-TEMPERATURE ; BARRIERS ; CONDUCTANCE ; GAS
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000241640800027
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426691
专题半导体研究所
通讯作者Wang, R. Z.
作者单位1.Beijing Univ Technol, Coll Mat Sci & Engn, Lab Thin Film Mat, Beijing 100022, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wei, J. S.,Wang, R. Z.,Yuan, R. Y.,et al. Tunable spin transport in magnetic-electric superlattice[J]. Physics letters a,2006,358(5-6):470-473.
APA Wei, J. S.,Wang, R. Z.,Yuan, R. Y.,Song, X. M.,Wang, B.,&Yan, H..(2006).Tunable spin transport in magnetic-electric superlattice.Physics letters a,358(5-6),470-473.
MLA Wei, J. S.,et al."Tunable spin transport in magnetic-electric superlattice".Physics letters a 358.5-6(2006):470-473.

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来源:半导体研究所

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