A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
文献类型：期刊论文
| 作者 | Ma Long; Huang Ying-Long; Zhang Yang; Yang Fu-Hua; Wang Liang-Chen |
| 刊名 | Chinese physics
 |
| 出版日期 | 2006-10-01 |
| 卷号 | 15期号:10页码:2422-2426 |
| 关键词 | Resonant tunnelling diode (rtd) High electron mobility transistor (hemt) Molecular beam epitaxy (mbe) Bistability Self-latching |
| ISSN号 | 1009-1963 |
| 通讯作者 | Ma long(malong@semi.ac.cn) |
| 英文摘要 | This paper reports that the structures of algaas/ingaas high electron mobility transistor (hemt) and alas/gaas resonant tunnelling diode (rtd) are epitaxially grown by molecular beam epitaxy ( mbe) in turn on a gaas substrate. an al0.24ga0.76as chair barrier layer, which is grown adjacent to the top alas barrier, helps to reduce the valley current of rtd. the peak-to-valley current ratio of fabricated rtd is 4.8 and the transconductance for the 1-mu m gate hemt is 125ms/mm. a static inverter which consists of two rtds and a hemt is designed and fabricated. unlike a conventional cmos inverter, the novel inverter exhibits self-latching property. |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000241002400039 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426700 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ma Long |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ma Long,Huang Ying-Long,Zhang Yang,et al. A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor[J]. Chinese physics,2006,15(10):2422-2426. |
| APA | Ma Long,Huang Ying-Long,Zhang Yang,Yang Fu-Hua,&Wang Liang-Chen.(2006).A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor.Chinese physics,15(10),2422-2426. |
| MLA | Ma Long,et al."A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor".Chinese physics 15.10(2006):2422-2426. |
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来源：半导体研究所
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