Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors
文献类型：期刊论文
| 作者 | Li, Z.; Li, C. J. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:283-287 |
| 关键词 | Dlts Defects Detectors Sensors Current transient |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2006.01.084 |
| 通讯作者 | Li, z.(zhengl@bnl.gov) |
| 英文摘要 | Current-based microscopic defect analysis method such as current deep level transient spectroscopy (i-dlts) and thermally stimulated current have been developed over the years at brookhaven national laboratory (bnl) for the defect characterizations on heavily irradiated (phi(n) >= 10(13) n/cm(2)) high-resistivity (>= 2 k omega cm) si sensors/detectors. the conventional dlts method using a capacitance transient is not valid on heavily irradiated high-resistivity si sensors/detectors. a new optical filling method, using lasers with various wavelengths, has been applied, which is more efficient and suitable than the traditional voltage-pulse filling. optimum defect-filling schemes and conditions have been suggested for heavily irradiated high-resistivity si sensors/detectors. (c) 2006 published by elsevier ltd. |
| WOS关键词 | SILICON DETECTORS |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000238805900059 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426701 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, Z. |
| 作者单位 | 1.Brookhaven Natl Lab, Upton, NY 11973 USA 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Z.,Li, C. J.. Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors[J]. Materials science in semiconductor processing,2006,9(1-3):283-287. |
| APA | Li, Z.,&Li, C. J..(2006).Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors.Materials science in semiconductor processing,9(1-3),283-287. |
| MLA | Li, Z.,et al."Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors".Materials science in semiconductor processing 9.1-3(2006):283-287. |
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来源：半导体研究所
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