Finite element analysis of stress and strain distributions in inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Zhou, WM; Wang, CY; Chen, YH; Wang, ZG |
| 刊名 | Chinese physics
 |
| 出版日期 | 2006-06-01 |
| 卷号 | 15期号:6页码:1315-1319 |
| 关键词 | Quantum dots Strain and stress distribution Strain energy Finite element method |
| ISSN号 | 1009-1963 |
| 通讯作者 | Zhou, wm() |
| 英文摘要 | In this paper, we perform systematic calculations of the stress and strain distributions in inas/gaas truncated pyramidal quantum dots (qds) with different wetting layer (wl) thickness, using the finite element method (fem). the stresses and strains are concentrated at the boundaries of the wl and qds, are reduced gradually from the boundaries to the interior, and tend to a uniform state for the positions away from the boundaries. the maximal strain energy density occurs at the vicinity of the interface between the wl and the substrate. the stresses, strains and released strain energy are reduced gradually with increasing wl thickness. the above results show that a critical wl thickness may exist, and the stress and strain distributions can make the growth of qds a growth of strained three-dimensional island when the wl thickness is above the critical value, and fem can be applied to investigate such nanosystems, qds, and the relevant results are supported by the experiments. |
| WOS关键词 | ISLANDS ; GROWTH ; GAAS ; GAAS(001) ; EVOLUTION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000238210900030 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426702 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, WM |
| 作者单位 | 1.Zhejiang Univ Technol, Coll Mech & Elect Engn, Hangzhou 310032, Peoples R China 2.Cent Iron & Steel Res Inst, Inst Funct Mat, Beijing 100081, Peoples R China 3.Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China 4.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, WM,Wang, CY,Chen, YH,et al. Finite element analysis of stress and strain distributions in inas/gaas quantum dots[J]. Chinese physics,2006,15(6):1315-1319. |
| APA | Zhou, WM,Wang, CY,Chen, YH,&Wang, ZG.(2006).Finite element analysis of stress and strain distributions in inas/gaas quantum dots.Chinese physics,15(6),1315-1319. |
| MLA | Zhou, WM,et al."Finite element analysis of stress and strain distributions in inas/gaas quantum dots".Chinese physics 15.6(2006):1315-1319. |
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来源：半导体研究所
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