中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes

文献类型:期刊论文

作者Li, D. Y.; Huang, Y. Z.; Zhu, J. J.; Zhao, D. G.; Liu, Z. S.; Zhang, S. M.; Ye, X. J.; Chong, M.; Chen, L. H.; Yang, H.
刊名Journal of applied physics
出版日期2006-08-15
卷号100期号:4页码:3
ISSN号0021-8979
DOI10.1063/1.2260658
通讯作者Li, d. y.(dyli@red.semi.ac.cn)
英文摘要Time-resolved light-current curves, spectra, and far-field distributions of ridge structure ingan multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. results show that the thermal lensing effect clearly improves the confinement of the higher order modes. the thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. the threshold current for the higher modes decreases by about 5 ma in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 american institute of physics.
WOS关键词LINEWIDTH ENHANCEMENT FACTOR ; WAVE-GUIDE LASER ; GAN SUBSTRATE ; INDEX ; TEMPERATURE ; GAIN
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000240236800155
URI标识http://www.irgrid.ac.cn/handle/1471x/2426706
专题半导体研究所
通讯作者Li, D. Y.
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Li, D. Y.,Huang, Y. Z.,Zhu, J. J.,et al. Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes[J]. Journal of applied physics,2006,100(4):3.
APA Li, D. Y..,Huang, Y. Z..,Zhu, J. J..,Zhao, D. G..,Liu, Z. S..,...&Liang, J. W..(2006).Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes.Journal of applied physics,100(4),3.
MLA Li, D. Y.,et al."Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes".Journal of applied physics 100.4(2006):3.

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来源:半导体研究所

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