Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes
文献类型:期刊论文
作者 | Li, D. Y.; Huang, Y. Z.; Zhu, J. J.; Zhao, D. G.; Liu, Z. S.; Zhang, S. M.; Ye, X. J.; Chong, M.; Chen, L. H.; Yang, H. |
刊名 | Journal of applied physics
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出版日期 | 2006-08-15 |
卷号 | 100期号:4页码:3 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.2260658 |
通讯作者 | Li, d. y.(dyli@red.semi.ac.cn) |
英文摘要 | Time-resolved light-current curves, spectra, and far-field distributions of ridge structure ingan multiple quantum well laser diodes grown on sapphire substrate are measured with a temporal resolution of 0.1 ns under a pulsed current condition. results show that the thermal lensing effect clearly improves the confinement of the higher order modes. the thermal lens leads to a lower threshold current for the higher order modes, a higher slope efficiency, and a change in the lasing mode of the device. the threshold current for the higher modes decreases by about 5 ma in every 10 ns in a pulse, and the slope efficiency increases by 7.5 times on the average when higher modes lase. (c) 2006 american institute of physics. |
WOS关键词 | LINEWIDTH ENHANCEMENT FACTOR ; WAVE-GUIDE LASER ; GAN SUBSTRATE ; INDEX ; TEMPERATURE ; GAIN |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000240236800155 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426706 |
专题 | 半导体研究所 |
通讯作者 | Li, D. Y. |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect & Nanooptoelec, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Li, D. Y.,Huang, Y. Z.,Zhu, J. J.,et al. Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes[J]. Journal of applied physics,2006,100(4):3. |
APA | Li, D. Y..,Huang, Y. Z..,Zhu, J. J..,Zhao, D. G..,Liu, Z. S..,...&Liang, J. W..(2006).Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes.Journal of applied physics,100(4),3. |
MLA | Li, D. Y.,et al."Thermal lensing effect in ridge structure ingan multiple quantum well laser diodes".Journal of applied physics 100.4(2006):3. |
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来源:半导体研究所
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