Passively mode-locked nd : yvo4 laser using semiconductor saturable absorption mirrors of interface states relaxation region
文献类型：期刊论文
| 作者 | Wang, YongGang; Ma, XiaoYu; Liu, Yang; Sun, LiQun; Tian, Qian |
| 刊名 | Optik
 |
| 出版日期 | 2006 |
| 卷号 | 117期号:10页码:474-476 |
| 关键词 | Sesam Mode lock Interface |
| ISSN号 | 0030-4026 |
| DOI | 10.1016/j.ijleo.2006.01.002 |
| 通讯作者 | Wang, yonggang(chinawygxjw@163.com) |
| 英文摘要 | Semiconductor saturable absorber mirrors (sesams) with gaas/air interface relaxation region have less nonsaturable loss than those with low temperature grown in0.25ga0.75as relaxation region. a thin layer of sio2 and a high reflectivity film of si/(sio2/si)(4) were coated on the sesams, respectively in order to improve the sesam's threshold for damage. the passively continuous wave mode-locked lasers with two such sesams were demonstrated, and the sesam with high reflectivity film of si/(sio2/si)(4) is proved to be helpful for high output power. (c) 2006 elsevier gmbh. all rights reserved. |
| WOS关键词 | ABSORBER ; GAAS |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000241282300005 |
| 出版者 | ELSEVIER GMBH, URBAN & FISCHER VERLAG |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426714 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, YongGang |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 2.Tsing Hua Univ, State Key Lab Precis Measurement Technol & Instru, Beijing 100084, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YongGang,Ma, XiaoYu,Liu, Yang,et al. Passively mode-locked nd : yvo4 laser using semiconductor saturable absorption mirrors of interface states relaxation region[J]. Optik,2006,117(10):474-476. |
| APA | Wang, YongGang,Ma, XiaoYu,Liu, Yang,Sun, LiQun,&Tian, Qian.(2006).Passively mode-locked nd : yvo4 laser using semiconductor saturable absorption mirrors of interface states relaxation region.Optik,117(10),474-476. |
| MLA | Wang, YongGang,et al."Passively mode-locked nd : yvo4 laser using semiconductor saturable absorption mirrors of interface states relaxation region".Optik 117.10(2006):474-476. |
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来源：半导体研究所
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