Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers
文献类型：期刊论文
| 作者 | Wang, YJ; Xu, SJ; Li, Q; Zhao, DG; Yang, H |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-01-23 |
| 卷号 | 88期号:4页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2168035 |
| 通讯作者 | Xu, sj() |
| 英文摘要 | The optical properties of two kinds of ingan/gan quantum-wells light emitting diodes, one of which was doped with si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. the results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with si doped barriers. it is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the si doped ones exhibit a well exponential time evolution. a new model developed by o. rubel, s. d. baranovskii, k. hantke, j. d. heber, j. koch, p. thomas, j. m. marshall, w. stolz, and w. h. ruhle [j. optoelectron. adv. mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. it is found that the si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in ingan/gan layered heterostructures. (c) 2006 american institute of physics. |
| WOS关键词 | PHOTOLUMINESCENCE ; LUMINESCENCE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| 出版者 | AMER INST PHYSICS |
| WOS记录号 | WOS:000234968600026 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426717 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, SJ |
| 作者单位 | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Hong Kong, HKU CAS Joint Lab New Mat, Hong Kong, Hong Kong, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YJ,Xu, SJ,Li, Q,et al. Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers[J]. Applied physics letters,2006,88(4):3. |
| APA | Wang, YJ,Xu, SJ,Li, Q,Zhao, DG,&Yang, H.(2006).Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers.Applied physics letters,88(4),3. |
| MLA | Wang, YJ,et al."Band gap renormalization and carrier localization effects in ingan/gan quantum-wells light emitting diodes with si doped barriers".Applied physics letters 88.4(2006):3. |
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来源：半导体研究所
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