Defect influence on luminescence efficiency of gan-based leds
文献类型：期刊论文
| 作者 | Li, Shuping; Fang, Zhilai; Chen, Hangyang; Li, Jinchai; Chen, Xiaohong; Yuan, Xiaoli; Sekiguchi, Takashi; Wang, Qiming; Kang, Junyong |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:371-374 |
| ISSN号 | 1369-8001 |
| 关键词 | Defects Gan Luminescence efficiency Led |
| DOI | 10.1016/j.mssp.2006.01.019 |
| 通讯作者 | Kang, junyong(jykang@xmu.edu.cn) |
| 英文摘要 | Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. the pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. the cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. the electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 elsevier ltd. all rights reserved. |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCI LTD |
| WOS记录号 | WOS:000238805900078 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426730 |
| 专题 | 半导体研究所 |
| 通讯作者 | Kang, Junyong |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 2.Xiamen Univ, Semicond Photon Res Ctr, Xiamen 361005, Peoples R China 3.Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan 4.Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, Shuping,Fang, Zhilai,Chen, Hangyang,et al. Defect influence on luminescence efficiency of gan-based leds[J]. Materials science in semiconductor processing,2006,9(1-3):371-374. |
| APA | Li, Shuping.,Fang, Zhilai.,Chen, Hangyang.,Li, Jinchai.,Chen, Xiaohong.,...&Kang, Junyong.(2006).Defect influence on luminescence efficiency of gan-based leds.Materials science in semiconductor processing,9(1-3),371-374. |
| MLA | Li, Shuping,et al."Defect influence on luminescence efficiency of gan-based leds".Materials science in semiconductor processing 9.1-3(2006):371-374. |
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来源：半导体研究所
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