Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate
文献类型：期刊论文
| 作者 | Wan, Keshu; Porporati, Alessandro Alan; Feng, Gan; Yang, Hui; Pezzotti, Giuseppe |
| 刊名 | Applied physics letters
 |
| 出版日期 | 2006-06-19 |
| 卷号 | 88期号:25页码:3 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.2214158 |
| 通讯作者 | Wan, keshu() |
| 英文摘要 | The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (gan) was determined as pi=-25.8 +/- 0.2 mev/gpa. a controlled biaxial stress field was applied on a hexagonal gan film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. this calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of gan. the main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. the ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 american institute of physics. |
| WOS关键词 | NITRIDE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000238487800032 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426733 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wan, Keshu |
| 作者单位 | 1.Kyoto Inst Technol, Ceram Phys Lab, Sakyo Ku, Kyoto 6068585, Japan 2.Kyoto Inst Technol, Res Inst Nanosci, Sakyo Ku, Kyoto 6068585, Japan 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wan, Keshu,Porporati, Alessandro Alan,Feng, Gan,et al. Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate[J]. Applied physics letters,2006,88(25):3. |
| APA | Wan, Keshu,Porporati, Alessandro Alan,Feng, Gan,Yang, Hui,&Pezzotti, Giuseppe.(2006).Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate.Applied physics letters,88(25),3. |
| MLA | Wan, Keshu,et al."Biaxial stress dependence of the electrostimulated near-band-gap spectrum of gan epitaxial film grown on (0001) sapphire substrate".Applied physics letters 88.25(2006):3. |
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来源：半导体研究所
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