中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Study on surface morphology of gan growth by mocvd on gan/si(111) template

文献类型:期刊论文

作者Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP
刊名Journal of rare earths
出版日期2006-03-01
卷号24页码:11-13
关键词Surface morphology Gan/si template Gan Mocvd
ISSN号1002-0721
通讯作者Wang, jx()
英文摘要The surface morphology of gan grown by mocvd on gan/si template was studied. rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. the formation of rough morphology is possibly related to ga-si alloy produced due to poor thermal stability of template at high temperature. the deep pinhole defects generated are deep down to the surface of mbe-grown gan/si template. the stress originated from the large thermal expansion coefficient difference between gan and si may be related to the formation of the pinhole defects. the surface morphology of the gan can be improved by optimizing the gan/si template and decreasing the growth temperature.
WOS关键词ALLOYS ; MOVPE
WOS研究方向Chemistry
WOS类目Chemistry, Applied
语种英语
WOS记录号WOS:000237331400005
出版者METALLURGICAL INDUSTRY PRESS
URI标识http://www.irgrid.ac.cn/handle/1471x/2426738
专题半导体研究所
通讯作者Wang, JX
作者单位Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Liu, Z,Wang, JX,Wang, XL,et al. Study on surface morphology of gan growth by mocvd on gan/si(111) template[J]. Journal of rare earths,2006,24:11-13.
APA Liu, Z.,Wang, JX.,Wang, XL.,Hu, GX.,Guo, LC.,...&Zeng, YP.(2006).Study on surface morphology of gan growth by mocvd on gan/si(111) template.Journal of rare earths,24,11-13.
MLA Liu, Z,et al."Study on surface morphology of gan growth by mocvd on gan/si(111) template".Journal of rare earths 24(2006):11-13.

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来源:半导体研究所

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