Study on surface morphology of gan growth by mocvd on gan/si(111) template
文献类型:期刊论文
作者 | Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP |
刊名 | Journal of rare earths
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出版日期 | 2006-03-01 |
卷号 | 24页码:11-13 |
关键词 | Surface morphology Gan/si template Gan Mocvd |
ISSN号 | 1002-0721 |
通讯作者 | Wang, jx() |
英文摘要 | The surface morphology of gan grown by mocvd on gan/si template was studied. rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied. the formation of rough morphology is possibly related to ga-si alloy produced due to poor thermal stability of template at high temperature. the deep pinhole defects generated are deep down to the surface of mbe-grown gan/si template. the stress originated from the large thermal expansion coefficient difference between gan and si may be related to the formation of the pinhole defects. the surface morphology of the gan can be improved by optimizing the gan/si template and decreasing the growth temperature. |
WOS关键词 | ALLOYS ; MOVPE |
WOS研究方向 | Chemistry |
WOS类目 | Chemistry, Applied |
语种 | 英语 |
WOS记录号 | WOS:000237331400005 |
出版者 | METALLURGICAL INDUSTRY PRESS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426738 |
专题 | 半导体研究所 |
通讯作者 | Wang, JX |
作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Z,Wang, JX,Wang, XL,et al. Study on surface morphology of gan growth by mocvd on gan/si(111) template[J]. Journal of rare earths,2006,24:11-13. |
APA | Liu, Z.,Wang, JX.,Wang, XL.,Hu, GX.,Guo, LC.,...&Zeng, YP.(2006).Study on surface morphology of gan growth by mocvd on gan/si(111) template.Journal of rare earths,24,11-13. |
MLA | Liu, Z,et al."Study on surface morphology of gan growth by mocvd on gan/si(111) template".Journal of rare earths 24(2006):11-13. |
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来源:半导体研究所
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