Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao, D. G.; Liu, Z. S.; Zhu, J. J.; Zhang, S. M.; Jiang, D. S.; Yang, Hui; Liang, J. W.; Li, X. Y.; Gong, H. M. |
| 刊名 | Applied surface science
 |
| 出版日期 | 2006-12-30 |
| 卷号 | 253期号:5页码:2452-2455 |
| ISSN号 | 0169-4332 |
| 关键词 | Al incorporation Mocvd Algan |
| DOI | 10.1016/j.apsusc.2006.04.062 |
| 通讯作者 | Zhao, d. g.(dgzhao@red.semi.ac.cn) |
| 英文摘要 | The effect of al incorporation on the algan growth by metalorganic chemical vapor deposition is investigated. with the increase of trimethylalluminum (tmal) flux, the crystal quality becomes worse, and the epilayer surface becomes rougher. an interesting phenomenon is that the growth rate of algan decrease with increasing tmal flux, which is opposite to the aln growth rate dependence on the tmal flux. all these effects are attributed to the different properties of at atoms due to the higher bond strength of al-n compared with ga-n, which lead to lower surface mobility and stronger competitive ability of al atoms during the growth. the enhancement of the surface mobility of al is especially important for improving the quality of algan. (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | 2-STEP GROWTH ; HIGH-QUALITY ; GAN ; MORPHOLOGY ; EPITAXY ; LAYER ; MOVPE |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE BV |
| WOS记录号 | WOS:000243244300016 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426739 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, D. G. |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, D. G.,Liu, Z. S.,Zhu, J. J.,et al. Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition[J]. Applied surface science,2006,253(5):2452-2455. |
| APA | Zhao, D. G..,Liu, Z. S..,Zhu, J. J..,Zhang, S. M..,Jiang, D. S..,...&Gong, H. M..(2006).Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition.Applied surface science,253(5),2452-2455. |
| MLA | Zhao, D. G.,et al."Effect of al incorporation on the algan growth by metalorganic chemical vapor deposition".Applied surface science 253.5(2006):2452-2455. |
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来源：半导体研究所
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