中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Q-switched and mode-locked diode-pumped nd : gdvo4 laser with low temperature gaas saturable absorber

文献类型:期刊论文

作者Liu, J; Wang, YG; Tian, WM; Gao, LY; He, JL; Ma, XY
刊名Optical materials
出版日期2006-06-01
卷号28期号:8-9页码:970-973
关键词Lt-gaas Nd : gdvo4 Diode-pump laser Mode-locking Q-switching
ISSN号0925-3467
DOI10.1016/j.optmat.2005.05.007
通讯作者Liu, j(jieliu@sdnu.edu.cn)
英文摘要Low temperature gaas (lt-gaas) was successfully grown at the temperature of 550 degrees c by metal organic vapor phase epitaxy on a semi-insular gaas substrate. with such an absorber as well as an output coupler we obtain q-switched mode-locked (qml) 1064 nm nd:gdvo4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. the repetition rate of the q-switched envelope increased from 100 to 660 khz as the pump power increased from 2.28 to 7.29 w. the mode-locked pulses inside the q-switched pulse envelope had a repetition rate of similar to 1.36 ghz. a maximum average output power of 953 mw was obtained. the dependence of the operational parameters on the pump power was also investigated experimentally. (c) 2005 elsevier b.v. all rights reserved.
WOS关键词ND-YVO4 LASER ; LOCKING ; MIRROR ; YAG
WOS研究方向Materials Science ; Optics
WOS类目Materials Science, Multidisciplinary ; Optics
语种英语
WOS记录号WOS:000237871200014
出版者ELSEVIER SCIENCE BV
URI标识http://www.irgrid.ac.cn/handle/1471x/2426743
专题半导体研究所
通讯作者Liu, J
作者单位1.Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China
推荐引用方式
GB/T 7714
Liu, J,Wang, YG,Tian, WM,et al. Q-switched and mode-locked diode-pumped nd : gdvo4 laser with low temperature gaas saturable absorber[J]. Optical materials,2006,28(8-9):970-973.
APA Liu, J,Wang, YG,Tian, WM,Gao, LY,He, JL,&Ma, XY.(2006).Q-switched and mode-locked diode-pumped nd : gdvo4 laser with low temperature gaas saturable absorber.Optical materials,28(8-9),970-973.
MLA Liu, J,et al."Q-switched and mode-locked diode-pumped nd : gdvo4 laser with low temperature gaas saturable absorber".Optical materials 28.8-9(2006):970-973.

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来源:半导体研究所

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