中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-power algainp laser diodes with current-injection-free region near the laser facet

文献类型:期刊论文

作者Xu, Y; Li, YZ; Gan, QQ; Cao, Q; Song, GF; Guo, L; Chen, LH
刊名Optical engineering
出版日期2006-03-01
卷号45期号:3页码:3
关键词Laser diodes Algainp Ridge waveguide Current-injection-free region
ISSN号0091-3286
DOI10.1117/1.2185567
通讯作者Xu, y(xuyun@red.semi.ac.cn)
英文摘要A high-power algainp laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (mocvd) using the (100) direction n-gaas substrates with a misorientation of 15 deg toward the (011) direction. the maximum continuous wave output power is about 90 mw for the traditional structure. in comparison, the maximum output power is enhanced by about 67%, and achieves 150 mw for lds with current-infection-free regions. the fundamental transverse-mode operation is obtained up to 70 mw. output characteristics at high temperatures are also improved greatly for an ld with a current-injection-free region, and the highest operation temperature is 70 c at 50 mw without kink. the threshold current is about 33 ma, the operation current and the slope efficiency at 100 mw are 120 ma and 0.9 mw/ma, respectively. the lasing wavelength is 658.4 nm at room-temperature 50 mw. (c) 2006 society of photo-optical instrumentation engineers.
WOS关键词OPERATION
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000237621800022
出版者SPIE-INT SOCIETY OPTICAL ENGINEERING
URI标识http://www.irgrid.ac.cn/handle/1471x/2426746
专题半导体研究所
通讯作者Xu, Y
作者单位Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xu, Y,Li, YZ,Gan, QQ,et al. High-power algainp laser diodes with current-injection-free region near the laser facet[J]. Optical engineering,2006,45(3):3.
APA Xu, Y.,Li, YZ.,Gan, QQ.,Cao, Q.,Song, GF.,...&Chen, LH.(2006).High-power algainp laser diodes with current-injection-free region near the laser facet.Optical engineering,45(3),3.
MLA Xu, Y,et al."High-power algainp laser diodes with current-injection-free region near the laser facet".Optical engineering 45.3(2006):3.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。