Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate
文献类型：期刊论文
| 作者 | Zhou, H. Y.; Qu, S. C.; Wang, Z. G.; Liang, L. Y.; Cheng, B. C.; Liu, J. P.; Peng, W. Q. |
| 刊名 | Materials science in semiconductor processing
 |
| 出版日期 | 2006-02-01 |
| 卷号 | 9期号:1-3页码:337-340 |
| 关键词 | Anodic alumina films Semi-insulated gaas substrate Anodization |
| ISSN号 | 1369-8001 |
| DOI | 10.1016/j.mssp.2006.01.030 |
| 通讯作者 | Zhou, h. y.(zhouhy@mail.semi.ac.cn) |
| 英文摘要 | Self-ordered porous alumina films on a semi-insulated gaas substrate were prepared in oxalic acid aqueous solutions by three-step anodization. the i-t curve of anodization process was recorded to observe time effects of anodization. atomic force microscopy was used to investigate structure and morphology of alumina films. it was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. at the same time the pore size and shape change with the pore widening time. field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to i-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; QUANTUM-DOT LASER ; NANOWIRE ARRAYS ; ANODIC ALUMINA ; ELECTRODEPOSITION ; TEMPLATES ; GAAS(001) |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000238805900070 |
| 出版者 | ELSEVIER SCI LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426751 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, H. Y. |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, H. Y.,Qu, S. C.,Wang, Z. G.,et al. Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate[J]. Materials science in semiconductor processing,2006,9(1-3):337-340. |
| APA | Zhou, H. Y..,Qu, S. C..,Wang, Z. G..,Liang, L. Y..,Cheng, B. C..,...&Peng, W. Q..(2006).Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate.Materials science in semiconductor processing,9(1-3),337-340. |
| MLA | Zhou, H. Y.,et al."Preparation and afm characterization of self-ordered porous alumina films on semi-insulated gaas substrate".Materials science in semiconductor processing 9.1-3(2006):337-340. |
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来源：半导体研究所
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