Kinetic monte carlo simulation of spatially ordered growth of quantum dots on patterned substrate
文献类型：期刊论文
| 作者 | Zhao, C; Chen, YH; Cui, CX; Xu, B; Yu, LK; Lei, W; Sun, J; Wang, ZG |
| 刊名 | Solid state communications
 |
| 出版日期 | 2006 |
| 卷号 | 137期号:11页码:630-633 |
| 关键词 | Quantum dot Molecular beam epitaxy Kinetic effects Monte carlo simulation |
| ISSN号 | 0038-1098 |
| DOI | 10.1016/j.ssc.2005.12.043 |
| 通讯作者 | Zhao, c(zhao_chang@sohu.com) |
| 英文摘要 | We report the growth of well-ordered inas qd chains by molecular beam epitaxy system. in order to analyze and extend the results of our experiment, a detailed kinetic monte carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of inas quantum dots (qds). we find that growth temperature plays a more important role than growth rate in the spatial ordering of the qds. we also investigate the effect of periodic stress on the shape of qds in simulation. the simulation results are in good qualitative agreement with our experiment. (c) 2006 elsevier ltd. all rights reserved. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; PERIODIC STRAIN ; NUCLEATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000236344000012 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426755 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhao, C |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao, C,Chen, YH,Cui, CX,et al. Kinetic monte carlo simulation of spatially ordered growth of quantum dots on patterned substrate[J]. Solid state communications,2006,137(11):630-633. |
| APA | Zhao, C.,Chen, YH.,Cui, CX.,Xu, B.,Yu, LK.,...&Wang, ZG.(2006).Kinetic monte carlo simulation of spatially ordered growth of quantum dots on patterned substrate.Solid state communications,137(11),630-633. |
| MLA | Zhao, C,et al."Kinetic monte carlo simulation of spatially ordered growth of quantum dots on patterned substrate".Solid state communications 137.11(2006):630-633. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。