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Selective growth of inas islands on patterned gaas (100) substrate

文献类型:期刊论文

作者Cui, CX; Chen, YH; Ren, YY; Xu, B; Jin, P; Zhao, C; Wang, ZG
刊名Superlattices and microstructures
出版日期2006-05-01
卷号39期号:5页码:446-453
关键词Patterned substrate Molecular beam epitaxy Quantum dots Inas Gaas Ingaas
ISSN号0749-6036
DOI10.1016/j.spmi.2005.10.004
通讯作者Cui, cx(cxcui@red.semi.ac.cn)
英文摘要By a combination of prepatterned substrate and self-organized growth, inas islands are grown on the stripe-patterned gaas (100) substrate by solid-source molecular beam epitaxy. it is found that the inas quantum dots can be formed either on the ridge or on the sidewall of the stripes near the bottom, depending on the structure of the stripes on the patterned substrate or molecular beam epitaxy growth conditions. when a inxga(1-x)as strained layer is grown first before inas deposition, almost all the inas quantum dots are deposited at the edges of the top ridge. and when the inas deposition amount is larger, a quasi-quantum wire structure is found. the optical properties of the inas dots on the patterned substrate are also investigated by photoluminescence. (c) 2005 elsevier ltd. all rights reserved.
WOS关键词ASSEMBLED QUANTUM DOTS ; MOLECULAR-BEAM EPITAXY ; FABRICATION
WOS研究方向Physics
WOS类目Physics, Condensed Matter
语种英语
WOS记录号WOS:000237914100007
出版者ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2426758
专题半导体研究所
通讯作者Cui, CX
作者单位Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Cui, CX,Chen, YH,Ren, YY,et al. Selective growth of inas islands on patterned gaas (100) substrate[J]. Superlattices and microstructures,2006,39(5):446-453.
APA Cui, CX.,Chen, YH.,Ren, YY.,Xu, B.,Jin, P.,...&Wang, ZG.(2006).Selective growth of inas islands on patterned gaas (100) substrate.Superlattices and microstructures,39(5),446-453.
MLA Cui, CX,et al."Selective growth of inas islands on patterned gaas (100) substrate".Superlattices and microstructures 39.5(2006):446-453.

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来源:半导体研究所

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