Unselective regrowth of 1.5-mu m ingaasp multiple-quantum-well distributed-feedback buried heterostructure lasers
文献类型:期刊论文
作者 | Feng, W.; Ding, Y.; Pan, J. Q.; Zhao, L. J.; Zhu, H. L.; Wang, W. |
刊名 | Optical engineering
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出版日期 | 2006-09-01 |
卷号 | 45期号:9页码:3 |
关键词 | Buried heterostructure Regrowth Multiple quantum well Distributed feed back Laser |
ISSN号 | 0091-3286 |
DOI | 10.1117/1.2355658 |
通讯作者 | Feng, w.(wfeng@semi.ac.cn) |
英文摘要 | Unselective regrowth for fabricating 1.5-mu m ingaasp multiple-quantum well (mqw) distributed-feedback (dfb) buried heterostructure (bh) lasers is developed. the experimental results exhibit superior characteristics, such as a low threshold of 8.5 ma, high slope efficiency of 0.55 mw/ma, circular-like far-field patterns, the narrow line-width of 2.5 mhz, etc. the high performance of the devices effectively proves the feasibility of the new method to fabricate buried heterostructure lasers. (c) 2006 society of photo-optical instrumentation engineers. |
WOS关键词 | HIGH-TEMPERATURE ; OPERATION ; 10-GB/S |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
WOS记录号 | WOS:000241665800002 |
出版者 | SPIE-INT SOCIETY OPTICAL ENGINEERING |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426765 |
专题 | 半导体研究所 |
通讯作者 | Feng, W. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 2.Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan |
推荐引用方式 GB/T 7714 | Feng, W.,Ding, Y.,Pan, J. Q.,et al. Unselective regrowth of 1.5-mu m ingaasp multiple-quantum-well distributed-feedback buried heterostructure lasers[J]. Optical engineering,2006,45(9):3. |
APA | Feng, W.,Ding, Y.,Pan, J. Q.,Zhao, L. J.,Zhu, H. L.,&Wang, W..(2006).Unselective regrowth of 1.5-mu m ingaasp multiple-quantum-well distributed-feedback buried heterostructure lasers.Optical engineering,45(9),3. |
MLA | Feng, W.,et al."Unselective regrowth of 1.5-mu m ingaasp multiple-quantum-well distributed-feedback buried heterostructure lasers".Optical engineering 45.9(2006):3. |
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来源:半导体研究所
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