中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers

文献类型:期刊论文

作者Pan Jiao-Qing; Zhao Qian; Zhu Hong-Liang; Zhao Ling-Juan; Ding Ying; Wang Bao-Jun; Zhou Fan; Wang Lu-Feng; Wang Wei
刊名Acta physica sinica
出版日期2006-10-01
卷号55期号:10页码:5216-5220
关键词Mocvd Ingaas/ingaasp Strained quantum well Distributed feedback laser
ISSN号1000-3290
通讯作者Pan jiao-qing(jqpan@red.semi.ac.cn)
英文摘要1.6-1.7 mu m highly strained ingaas/ingaasp distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. high quality highly strained ingaas/inp materials were obtained by using strain buffer layer. four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. the uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15ma) and high output power (> 14mw at 100ma). in the temperature range from 10 degrees c to 40 degrees c, the characteristic temperature t-0 of the 1.74 mu m laser is 57k, which is comparable to that of the 1.55 mu m-wavelength ingaasp/inp-dfb laser.
WOS关键词TUNABLE DIODE-LASER ; QUANTUM-WELL LASER ; 1.74 MU-M ; SPECTROMETER ; METHANE ; POWER
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000241215200039
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426775
专题半导体研究所
通讯作者Pan Jiao-Qing
作者单位Chinese Acad Sci, Inst Semicond, Optoelect Res & Dev Ctr, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Pan Jiao-Qing,Zhao Qian,Zhu Hong-Liang,et al. Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers[J]. Acta physica sinica,2006,55(10):5216-5220.
APA Pan Jiao-Qing.,Zhao Qian.,Zhu Hong-Liang.,Zhao Ling-Juan.,Ding Ying.,...&Wang Wei.(2006).Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers.Acta physica sinica,55(10),5216-5220.
MLA Pan Jiao-Qing,et al."Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers".Acta physica sinica 55.10(2006):5216-5220.

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来源:半导体研究所

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