Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers
文献类型：期刊论文
| 作者 | Pan Jiao-Qing; Zhao Qian; Zhu Hong-Liang; Zhao Ling-Juan; Ding Ying; Wang Bao-Jun; Zhou Fan; Wang Lu-Feng; Wang Wei |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2006-10-01 |
| 卷号 | 55期号:10页码:5216-5220 |
| 关键词 | Mocvd Ingaas/ingaasp Strained quantum well Distributed feedback laser |
| ISSN号 | 1000-3290 |
| 通讯作者 | Pan jiao-qing(jqpan@red.semi.ac.cn) |
| 英文摘要 | 1.6-1.7 mu m highly strained ingaas/ingaasp distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. high quality highly strained ingaas/inp materials were obtained by using strain buffer layer. four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. the uncoated 1.66 mu m and 1.74 mu m lasers with ridge wave guide 3 mu m wide have low threshold current (< 15ma) and high output power (> 14mw at 100ma). in the temperature range from 10 degrees c to 40 degrees c, the characteristic temperature t-0 of the 1.74 mu m laser is 57k, which is comparable to that of the 1.55 mu m-wavelength ingaasp/inp-dfb laser. |
| WOS关键词 | TUNABLE DIODE-LASER ; QUANTUM-WELL LASER ; 1.74 MU-M ; SPECTROMETER ; METHANE ; POWER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000241215200039 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426775 |
| 专题 | 半导体研究所 |
| 通讯作者 | Pan Jiao-Qing |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Optoelect Res & Dev Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Pan Jiao-Qing,Zhao Qian,Zhu Hong-Liang,et al. Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers[J]. Acta physica sinica,2006,55(10):5216-5220. |
| APA | Pan Jiao-Qing.,Zhao Qian.,Zhu Hong-Liang.,Zhao Ling-Juan.,Ding Ying.,...&Wang Wei.(2006).Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers.Acta physica sinica,55(10),5216-5220. |
| MLA | Pan Jiao-Qing,et al."Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers".Acta physica sinica 55.10(2006):5216-5220. |
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来源：半导体研究所
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