Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-si wafers
文献类型：期刊论文
| 作者 | Xu, Ying; Hu, Zhihua; Diao, Hongwei; Cai, Yi; Zhang, Shibin; Zeng, Xiangbo; Hao, Huiying; Liao, Xianbo; Fortunato, Elvira; Martins, Rodrigo |
| 刊名 | Journal of non-crystalline solids
 |
| 出版日期 | 2006-06-15 |
| 卷号 | 352期号:9-20页码:1972-1975 |
| 关键词 | Silicon Solar cells Heterojunctions Nanocrystals |
| ISSN号 | 0022-3093 |
| DOI | 10.1016/j.jnoncrysol.2006.02.028 |
| 通讯作者 | Hu, zhihua(zhu@uninova.pt) |
| 英文摘要 | Hydrogenated nanocrystalline silicon (nc-si:h) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-si) wafers. the nc-si:h n-layers were deposited by radio-frequency (rf) plasma enhanced chemical vapor deposition (pecvd), and characterized using raman spectroscopy, optical transmittance and activation energy of dark-conductivity. the nc-si:h n-layers obtained comprise fine grained nanocrystallites embedded in amorphous matrix, which have a wider bandgap and a smaller activation energy. heterojunction solar cells incorporated with the nc-si n-layer were fabricated using configuration of ag (100 nm)/1t0 (80 nm)/n-nc-si:h (15 nm)/buffer a-si:h/p-c-si (300 mu m)/al (200 nm), where a very thin intrinsic a-si:h buffer layer was used to passivate the p-c-si surface, followed by a hydrogen plasma treatment prior to the deposition of the thin nanocrystalline layer. the results show that heterojunction solar cells subjected to these surface treatments exhibit a remarkable increase in the efficiency, up to 14.1% on an area of 2.43 cm(2). (c) 2006 elsevier b.v. all rights reserved. |
| WOS关键词 | CRYSTALLINE SILICON ; LAYER |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics ; Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000238782900263 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426789 |
| 专题 | 半导体研究所 |
| 通讯作者 | Hu, Zhihua |
| 作者单位 | 1.Univ Nova Lisboa, Dept Mat Sci, P-2829516 Caparica, Almada, Portugal 2.Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Almada, Portugal 3.Univ Nova Lisboa, Fac Sci & Technol, P-2829516 Caparica, Portugal 4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 5.Kunming Inst Phys, Kunming, Yunnan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xu, Ying,Hu, Zhihua,Diao, Hongwei,et al. Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-si wafers[J]. Journal of non-crystalline solids,2006,352(9-20):1972-1975. |
| APA | Xu, Ying.,Hu, Zhihua.,Diao, Hongwei.,Cai, Yi.,Zhang, Shibin.,...&Martins, Rodrigo.(2006).Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-si wafers.Journal of non-crystalline solids,352(9-20),1972-1975. |
| MLA | Xu, Ying,et al."Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-si wafers".Journal of non-crystalline solids 352.9-20(2006):1972-1975. |
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来源：半导体研究所
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