Preparation of gan films with the method of magnetron sputtering plus self-assembly reaction mode
文献类型：期刊论文
| 作者 | Xue, CS; Dong, ZH; Zhuang, HZ; Wang, SY; Gao, HY; Tian, DH; Wu, YX |
| 刊名 | Rare metal materials and engineering
 |
| 出版日期 | 2006-03-01 |
| 卷号 | 35期号:3页码:463-466 |
| 关键词 | Magnetron sputtering Self-assemble Gan Intermediate layer |
| ISSN号 | 1002-185X |
| 通讯作者 | Xue, cs() |
| 英文摘要 | Ga2o3 films were deposited onto si (111) substrates with radio frequency (r. f.) magnetron sputtering system. they self-assembled into gan films after reacted with ammonia. the lattice mismatch between substrates and epitaxy layer affects the films' quality. in order to optimize the films, thin sic films as intermediate layers also deposited onto the substrate with magnetron sputtering. the samples intermediate were compared. the results indicate intermediate layer's positive effect to gan films. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000236600300030 |
| 出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426791 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xue, CS |
| 作者单位 | Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xue, CS,Dong, ZH,Zhuang, HZ,et al. Preparation of gan films with the method of magnetron sputtering plus self-assembly reaction mode[J]. Rare metal materials and engineering,2006,35(3):463-466. |
| APA | Xue, CS.,Dong, ZH.,Zhuang, HZ.,Wang, SY.,Gao, HY.,...&Wu, YX.(2006).Preparation of gan films with the method of magnetron sputtering plus self-assembly reaction mode.Rare metal materials and engineering,35(3),463-466. |
| MLA | Xue, CS,et al."Preparation of gan films with the method of magnetron sputtering plus self-assembly reaction mode".Rare metal materials and engineering 35.3(2006):463-466. |
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来源：半导体研究所
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