Recombination property of nitrogen-acceptor-bound states in zno
文献类型：期刊论文
| 作者 | Yang, XD; Xu, ZY; Sun, Z; Sun, BQ; Ding, L; Wang, FZ; Ye, ZZ |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2006-02-15 |
| 卷号 | 99期号:4页码:3 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.2171779 |
| 通讯作者 | Yang, xd(young@red.semi.ac.cn) |
| 英文摘要 | The recombination property of nitrogen (n)-related acceptor-bound states in zno has been investigated by photoluminescence (pl), time-resolved pl, and selective pl. several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large coulomb interaction. it is strongly suggested that bound exciton emission dominates the recombination process related to the n acceptor. the recombination lifetime is 750 ps and the binding energy is 67 mev for n-acceptor-bound exciton at low temperature. (c) 2006 american institute of physics. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; P-TYPE ZNO ; OPTICAL-PROPERTIES ; EXCITON FORMATION ; PHOTOLUMINESCENCE ; FILMS ; SPECTROSCOPY ; DYNAMICS ; IMPURITY ; ENERGY |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000235663100070 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426797 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yang, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China 3.Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yang, XD,Xu, ZY,Sun, Z,et al. Recombination property of nitrogen-acceptor-bound states in zno[J]. Journal of applied physics,2006,99(4):3. |
| APA | Yang, XD.,Xu, ZY.,Sun, Z.,Sun, BQ.,Ding, L.,...&Ye, ZZ.(2006).Recombination property of nitrogen-acceptor-bound states in zno.Journal of applied physics,99(4),3. |
| MLA | Yang, XD,et al."Recombination property of nitrogen-acceptor-bound states in zno".Journal of applied physics 99.4(2006):3. |
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来源：半导体研究所
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