中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Dependence of intrinsic defects in zno films on oxygen fraction studied by positron annihilation

文献类型:期刊论文

作者Peng, CX; Weng, HM; Yang, XJ; Ye, BJ; Cheng, B; Zhou, XY; Han, RD
刊名Chinese physics letters
出版日期2006-02-01
卷号23期号:2页码:489-492
ISSN号0256-307X
通讯作者Peng, cx(pengcx@mail.ustc.edu.cn)
英文摘要Defects in zno films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetic positron beam technique. the dominate intrinsic defects in these zno samples are o vacancies (v-o) and zn interstitials (zn-i) when the oxygen fraction in the o-2/ar feed gas does not exceed 70% in the processing chamber. on the other hand, zinc vacancies are preponderant in the zno elms fabricated in richer oxygen environment. the concentration of zinc vacancies increases with the increasing (2) fraction. for the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. it is speculated that some unknown defects could shield zinc vacancies. the concentration of zinc vacancies in the zno films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photoluminescence spectra.
WOS关键词P-TYPE ZNO ; THIN-FILMS ; ROOM-TEMPERATURE ; PHOTOLUMINESCENCE ; DEPOSITION ; SUBSTRATE ; VACANCIES ; LAYER ; BEAM ; GAN
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000235255200060
出版者CHINESE PHYSICAL SOC
URI标识http://www.irgrid.ac.cn/handle/1471x/2426798
专题半导体研究所
通讯作者Peng, CX
作者单位1.Univ Sci & Technol China, Dept Modern Phys, Hefei 230026, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Key Lab Nanooptoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Peng, CX,Weng, HM,Yang, XJ,et al. Dependence of intrinsic defects in zno films on oxygen fraction studied by positron annihilation[J]. Chinese physics letters,2006,23(2):489-492.
APA Peng, CX.,Weng, HM.,Yang, XJ.,Ye, BJ.,Cheng, B.,...&Han, RD.(2006).Dependence of intrinsic defects in zno films on oxygen fraction studied by positron annihilation.Chinese physics letters,23(2),489-492.
MLA Peng, CX,et al."Dependence of intrinsic defects in zno films on oxygen fraction studied by positron annihilation".Chinese physics letters 23.2(2006):489-492.

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来源:半导体研究所

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