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Chinese Academy of Sciences Institutional Repositories Grid
Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser

文献类型:期刊论文

作者Liu, Jie; Wang, Chunxing; Tian, Wenmiao; Liu, Shihua; Wang, Guanggang; Wang, Yonggang
刊名Japanese journal of applied physics part 1-regular papers brief communications & review papers
出版日期2006-08-01
卷号45期号:8a页码:6268-6270
关键词Lt-gaas Nd : gdvo4 Q-switched Mode-locked
ISSN号0021-4922
DOI10.1143/jjap.45.6268
通讯作者Liu, jie(jieliu@sdnu.edu.cn)
英文摘要A passively q-switched and mode-locked diode-pumped nd:gdvo4 laser was demonstrated using a low-temperature-grown gaas wafer (lt-gaas) as an intracavity saturable absorber. the maximal q-switched mode-locked average output power was 750 mw with the q-switched envelop having a repetition rate of 167 khz. the mode-locked pulse trains inside the q-switched pulse envelope had a repetition rate of similar to 790 mhz.
WOS关键词PASSIVE-MODE-LOCKING ; LOCKED ND-YVO4 LASER ; SATURABLE ABSORBER ; CR4+-YAG ; MIRROR ; CAVITY
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000240512800041
出版者INST PURE APPLIED PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2426799
专题半导体研究所
通讯作者Liu, Jie
作者单位1.Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China
推荐引用方式
GB/T 7714
Liu, Jie,Wang, Chunxing,Tian, Wenmiao,et al. Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser[J]. Japanese journal of applied physics part 1-regular papers brief communications & review papers,2006,45(8a):6268-6270.
APA Liu, Jie,Wang, Chunxing,Tian, Wenmiao,Liu, Shihua,Wang, Guanggang,&Wang, Yonggang.(2006).Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser.Japanese journal of applied physics part 1-regular papers brief communications & review papers,45(8a),6268-6270.
MLA Liu, Jie,et al."Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser".Japanese journal of applied physics part 1-regular papers brief communications & review papers 45.8a(2006):6268-6270.

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来源:半导体研究所

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