Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser
文献类型:期刊论文
作者 | Liu, Jie; Wang, Chunxing; Tian, Wenmiao; Liu, Shihua; Wang, Guanggang; Wang, Yonggang |
刊名 | Japanese journal of applied physics part 1-regular papers brief communications & review papers
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出版日期 | 2006-08-01 |
卷号 | 45期号:8a页码:6268-6270 |
关键词 | Lt-gaas Nd : gdvo4 Q-switched Mode-locked |
ISSN号 | 0021-4922 |
DOI | 10.1143/jjap.45.6268 |
通讯作者 | Liu, jie(jieliu@sdnu.edu.cn) |
英文摘要 | A passively q-switched and mode-locked diode-pumped nd:gdvo4 laser was demonstrated using a low-temperature-grown gaas wafer (lt-gaas) as an intracavity saturable absorber. the maximal q-switched mode-locked average output power was 750 mw with the q-switched envelop having a repetition rate of 167 khz. the mode-locked pulse trains inside the q-switched pulse envelope had a repetition rate of similar to 790 mhz. |
WOS关键词 | PASSIVE-MODE-LOCKING ; LOCKED ND-YVO4 LASER ; SATURABLE ABSORBER ; CR4+-YAG ; MIRROR ; CAVITY |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000240512800041 |
出版者 | INST PURE APPLIED PHYSICS |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426799 |
专题 | 半导体研究所 |
通讯作者 | Liu, Jie |
作者单位 | 1.Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100022, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Jie,Wang, Chunxing,Tian, Wenmiao,et al. Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser[J]. Japanese journal of applied physics part 1-regular papers brief communications & review papers,2006,45(8a):6268-6270. |
APA | Liu, Jie,Wang, Chunxing,Tian, Wenmiao,Liu, Shihua,Wang, Guanggang,&Wang, Yonggang.(2006).Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser.Japanese journal of applied physics part 1-regular papers brief communications & review papers,45(8a),6268-6270. |
MLA | Liu, Jie,et al."Experimental investigation of intracavity absorber low temperature gaas in diode-pumped nd : gdvo4 laser".Japanese journal of applied physics part 1-regular papers brief communications & review papers 45.8a(2006):6268-6270. |
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来源:半导体研究所
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