中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature and pressure dependences of the copper-related green emission in zno microrods

文献类型:期刊论文

作者Su, F. H.; Liu, Y. F.; Chen, W.; Wang, W. J.; Ding, K.; Li, G. H.; Joly, A. G.; McCready, D. E.
刊名Journal of applied physics
出版日期2006-07-01
卷号100期号:1页码:6
ISSN号0021-8979
DOI10.1063/1.2206705
通讯作者Chen, w.(wchen@nomadics.com)
英文摘要We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike zno microrods. the temperature dependence of the green emission energy follows the changes in the band gap from 10-200 k, but deviates from this behavior above 200 k. the pressure dependence of the copper-related green band (25 +/- 5 mev/gpa) is similar to that of the band gap of zno, and is larger than that reported previously for defect-related green emission in zno. (c) 2006 american institute of physics.
WOS关键词ZINC-OXIDE ; OPTICAL-PROPERTIES ; PHOTOLUMINESCENCE ; LUMINESCENCE ; IMPURITIES ; NANOWIRES ; SAPPHIRE ; GROWTH ; BAND ; CU
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
出版者AMER INST PHYSICS
WOS记录号WOS:000239056400007
URI标识http://www.irgrid.ac.cn/handle/1471x/2426808
专题半导体研究所
通讯作者Chen, W.
作者单位1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
2.Nomad Inc, Stillwater, OK 74074 USA
3.Pacific NW Natl Lab, Richland, WA 99354 USA
推荐引用方式
GB/T 7714
Su, F. H.,Liu, Y. F.,Chen, W.,et al. Temperature and pressure dependences of the copper-related green emission in zno microrods[J]. Journal of applied physics,2006,100(1):6.
APA Su, F. H..,Liu, Y. F..,Chen, W..,Wang, W. J..,Ding, K..,...&McCready, D. E..(2006).Temperature and pressure dependences of the copper-related green emission in zno microrods.Journal of applied physics,100(1),6.
MLA Su, F. H.,et al."Temperature and pressure dependences of the copper-related green emission in zno microrods".Journal of applied physics 100.1(2006):6.

入库方式: iSwitch采集

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。