Temperature and pressure dependences of the copper-related green emission in zno microrods
文献类型:期刊论文
作者 | Su, F. H.; Liu, Y. F.; Chen, W.; Wang, W. J.; Ding, K.; Li, G. H.; Joly, A. G.; McCready, D. E. |
刊名 | Journal of applied physics |
出版日期 | 2006-07-01 |
卷号 | 100期号:1页码:6 |
ISSN号 | 0021-8979 |
DOI | 10.1063/1.2206705 |
通讯作者 | Chen, w.(wchen@nomadics.com) |
英文摘要 | We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike zno microrods. the temperature dependence of the green emission energy follows the changes in the band gap from 10-200 k, but deviates from this behavior above 200 k. the pressure dependence of the copper-related green band (25 +/- 5 mev/gpa) is similar to that of the band gap of zno, and is larger than that reported previously for defect-related green emission in zno. (c) 2006 american institute of physics. |
WOS关键词 | ZINC-OXIDE ; OPTICAL-PROPERTIES ; PHOTOLUMINESCENCE ; LUMINESCENCE ; IMPURITIES ; NANOWIRES ; SAPPHIRE ; GROWTH ; BAND ; CU |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
语种 | 英语 |
出版者 | AMER INST PHYSICS |
WOS记录号 | WOS:000239056400007 |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426808 |
专题 | 半导体研究所 |
通讯作者 | Chen, W. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Nomad Inc, Stillwater, OK 74074 USA 3.Pacific NW Natl Lab, Richland, WA 99354 USA |
推荐引用方式 GB/T 7714 | Su, F. H.,Liu, Y. F.,Chen, W.,et al. Temperature and pressure dependences of the copper-related green emission in zno microrods[J]. Journal of applied physics,2006,100(1):6. |
APA | Su, F. H..,Liu, Y. F..,Chen, W..,Wang, W. J..,Ding, K..,...&McCready, D. E..(2006).Temperature and pressure dependences of the copper-related green emission in zno microrods.Journal of applied physics,100(1),6. |
MLA | Su, F. H.,et al."Temperature and pressure dependences of the copper-related green emission in zno microrods".Journal of applied physics 100.1(2006):6. |
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来源:半导体研究所
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