Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures
文献类型：期刊论文
| 作者 | Kong Lingmin; Cai Jiafa; Wu Zhengyun; Gong Zheng; Fang Zhidan; Niu Zhichuan |
| 刊名 | Journal of wuhan university of technology-materials science edition
 |
| 出版日期 | 2006-06-01 |
| 卷号 | 21期号:2页码:76-79 |
| 关键词 | Ingaas layer Inas quantum dots Time-resolved pl spectra |
| ISSN号 | 1000-2413 |
| 通讯作者 | Wu zhengyun(zhywu@xmu.edu.cn) |
| 英文摘要 | The effects of various ingaas layers on the structural and optical properties of inas self-assembled quantum dots (qds) grown by molecular-beam epitaxy ( mbe) were investigated. the emission wavelength of 1317 nm was obtained by embedding inas qds in ingas/ggas quantum well. the temperature-dependent and timed-resolved photoluminescence (tdpl and trpl) were used to study the dynamic characteristics of carriers. ingaas cap layer may improve the quality of quantum dots for the strain relaxation around qds, which results in a stronger pl intensity and an increase of pl peak lifetime up to 170 k. we found that ingaas buffer layer may reduce the pl peak lifetime of inas qds, which is due to the buffer layer accelerating the carrier migration. the results also show that ingaas cap layer can increase the temperature point when, the thermal reemission and nonradiative recombination contribute significantly to the carrier dynamics. |
| WOS关键词 | 1.3 MU-M ; CARRIER DYNAMICS ; LASERS ; GROWTH ; WAVELENGTH ; EMISSION ; ISLANDS ; LAYERS ; SIZE |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000238895300020 |
| 出版者 | JOURNAL WUHAN UNIV TECHNOLOGY |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2426813 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wu Zhengyun |
| 作者单位 | 1.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Kong Lingmin,Cai Jiafa,Wu Zhengyun,et al. Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures[J]. Journal of wuhan university of technology-materials science edition,2006,21(2):76-79. |
| APA | Kong Lingmin,Cai Jiafa,Wu Zhengyun,Gong Zheng,Fang Zhidan,&Niu Zhichuan.(2006).Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures.Journal of wuhan university of technology-materials science edition,21(2),76-79. |
| MLA | Kong Lingmin,et al."Optical characteristics of inas quantum dots on gaas matrix by using various ingaas structures".Journal of wuhan university of technology-materials science edition 21.2(2006):76-79. |
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来源：半导体研究所
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